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CZTS laminated absorption layer based on magnetron sputtering method and preparation method thereof

A technology of magnetron sputtering and absorption layer, which is applied in the direction of final product manufacturing, sustainable manufacturing/processing, photovoltaic power generation, etc., to achieve the effect of improving efficiency, fast reaction speed, and non-toxic production raw materials

Active Publication Date: 2018-07-10
KUNMING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this film structure overcomes the standard stoichiometric ratio and longitudinal distribution of elements in the film to a certain extent, it still has certain limitations on the absorption and utilization of sunlight due to the influence of the film thickness and the band gap range of the intrinsic CZTS film. sex

Method used

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  • CZTS laminated absorption layer based on magnetron sputtering method and preparation method thereof
  • CZTS laminated absorption layer based on magnetron sputtering method and preparation method thereof
  • CZTS laminated absorption layer based on magnetron sputtering method and preparation method thereof

Examples

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Effect test

Embodiment 1

[0048] Embodiment 1: as figure 1 As shown in the schematic diagram of the structure of the CZTS superimposed absorbing layer, the CZTS superimposed absorbing layer in this example is prepared by magnetron sputtering method, from bottom to top is the substrate, Fe-doped Cu 2 ZnSnS 4 Absorber layer, undoped Cu 2 ZnSnS 4 Absorber layer, Cu doped with Ge 2 ZnSnS 4 Absorber layer; Cu doped with Fe 2 ZnSnS 4 The thickness of the absorbing layer is 510nm, undoped Cu 2 ZnSnS 4 The thickness of the absorbing layer is 500nm, Ge-doped Cu 2 ZnSnS 4 The thickness of the absorbing layer is 510nm;

[0049] The preparation method of the CZTS laminated absorbing layer in this embodiment, the specific steps are:

[0050] (1) Install the quaternary CZTS semiconductor target, Fe source target, and Ge source target in the magnetron sputtering chamber, and adjust the target base distance between the target and the substrate in the sputtering chamber; the target base distance of the Fe so...

Embodiment 2

[0060] Embodiment 2: as figure 1 As shown in the schematic diagram of the structure of the CZTS superimposed absorbing layer, the CZTS superimposed absorbing layer in this example is prepared by magnetron sputtering method, from bottom to top is the substrate, Fe-doped Cu 2 ZnSnS 4 Absorber layer, undoped Cu 2 ZnSnS 4 Absorber layer, Cu doped with Ge 2 ZnSnS 4 Absorber layer; Cu doped with Fe 2 ZnSnS 4 The thickness of the absorbing layer is 550nm, undoped Cu 2 ZnSnS 4 The thickness of the absorbing layer is 720nm, Ge-doped Cu 2 ZnSnS 4 The thickness of the absorbing layer is 550nm;

[0061] The preparation method of the CZTS laminated absorbing layer in this embodiment, the specific steps are:

[0062] (1) Install the quaternary CZTS semiconductor target, Fe source target, and Ge source target in the magnetron sputtering chamber, and adjust the target base distance between the target and the substrate in the sputtering chamber; the target base distance of the Fe so...

Embodiment 3

[0072] Embodiment 3: as figure 1 As shown in the schematic diagram of the structure of the CZTS superimposed absorbing layer, the CZTS superimposed absorbing layer in this example is prepared by magnetron sputtering method, from bottom to top is the substrate, Fe-doped Cu 2 ZnSnS 4 Absorber layer, undoped Cu 2 ZnSnS 4 Absorber layer, Cu doped with Ge 2 ZnSnS 4 Absorber layer; Cu doped with Fe 2 ZnSnS 4 The thickness of the absorbing layer is 650nm, undoped Cu 2 ZnSnS 4 The thickness of the absorbing layer is 800nm, Cu doped with Ge 2 ZnSnS 4 The thickness of the absorbing layer is 650nm;

[0073] The preparation method of the CZTS laminated absorbing layer in this embodiment, the specific steps are:

[0074] (1) Install the quaternary CZTS semiconductor target, Fe source target, and Ge source target in the magnetron sputtering chamber, and adjust the target base distance between the target and the substrate in the sputtering chamber; the target base distance of the ...

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Abstract

The present invention relates to a CZTS (Cu2ZnSnS4) laminated absorption layer based on the magnetron sputtering method and a preparation method thereof, belonging to the technical field of photovoltaic materials and device new generation. The CZTS laminated absorption layer is prepared by employing the magnetron sputtering method. The CZTS laminated absorption layer comprises a substrate, an iron-doped CZTS absorption layer, an undoped CZTS absorption layer and a Ge-doped CZTS absorption layer which are arranged in order from bottom to top. The CZTS laminated absorption layer takes CZTS materials as a basal body, the magnetron sputtering method is employed, displacement doping of different elements achieves control of different band gap changes, and therefore the CZTS laminated absorptionlayer can selectively absorb and convert a no-passing area of a solar spectrum to achieve effective utilization of the sunlight.

Description

technical field [0001] The invention relates to a CZTS superimposed absorption layer based on a magnetron sputtering method and a preparation method thereof, belonging to the technical field of new energy sources of photovoltaic materials and devices. Background technique [0002] Cu 2 ZnSnS 4 (CZTS) has become one of the potential absorbing layer materials of thin-film solar cells because of its environmentally friendly, non-toxic, rich content, and direct band gap semiconductor material, high light absorption coefficient and suitable band gap width. The theoretical photoelectric conversion efficiency is 32.3%, but the highest efficiency obtained in the laboratory is only 12.6%. Studies have found that the superposition of different bandgap materials will improve the photoelectric conversion efficiency (PCE). [0003] At present, the methods of using CZTS as the absorbing layer material of solar thin film cells include vacuum thermal evaporation method, pulse laser depos...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/0296H01L31/0304H01L31/18
CPCH01L31/02168H01L31/0296H01L31/03046H01L31/1876Y02E10/544Y02P70/50
Inventor 沈韬韦雷凯朱艳孙淑红
Owner KUNMING UNIV OF SCI & TECH
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