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Gradient-doped ferroelectric thin film device and preparation method thereof

ActiveCN121262931Buniform densityno crackFinal product manufactureCrystallographyFerroelectric thin films
This application provides a gradient-doped ferroelectric thin film device and its fabrication method, relating to the field of optoelectronic device technology. The gradient-doped ferroelectric thin film device comprises, from bottom to top, a substrate, a buried oxide layer, a buffer layer, and a ferroelectric thin film material layer; the ferroelectric thin film material layer is doped with impurity ions, with the doping concentration of the impurity ions increasing sequentially from bottom to top. This application, by employing a bottom-up incremental gradient doping design, optimizes the interface defects and internal stress of the ferroelectric thin film, overcomes the problem of lattice mismatch between ordinary ferroelectric thin films and the substrate layer, achieves improved crystal quality and enhanced electro-optic coefficient, and effectively improves the electro-optic effect.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI