Large-size high-power pulse thyristor

Abstract

The invention relates to a large-size high-power pulse thyristor, which belongs to the fields of power semiconductor device technologies and pulse power technologies and mainly solves a problem that an ordinary thyristor is lower than 1200A / muS in turn-on di / dt and lower than 90kA in transient surge current Itsm. The large-size high-power pulse thyristor is mainly characterized in that the diameter of a chip ranges between 4 inches to 8 inches, and the chip is of a silicon-based PNP four-layer three-terminal structure; two end faces of the chip are plated with a metal thin layer so as to connect an outer electrode, and an amplifying gate distribution area is intersected with a cathode in distribution; the chip, an insulating rubber gasket, a cathode molybdenum sheet, an anode molybdenum sheet, a gate assembly, a shell upper sealing member and a shell lower sealing member adopt suspension assembly and crimping package; the boundary of the outer edge of an amplifying gate central area and a cathode area of the cathode is located beyond 20% of the chip diameter, and the amplifying gate distribution area is arranged in the shape of a snowflake. The pulse peak current Ipm of the singledevice can reach up to 200kA-500kA, the blocking voltage reaches 4500V-7500V, and the di / dt reaches 2Ka / muS-5kA / muS.

Description

technical field [0001] The invention belongs to the field of power semiconductor device technology and pulse power technology. It specifically relates to a power semiconductor device, which is a solid-state switch, and as a core component of high-performance pulse power equipment and systems, it is widely used in fields such as electric power, energy, and environmental protection. Background technique [0002] 1) Pulse power switch and its application. [0003] Pulse power technology is based on electrical technology, researching and solving control technologies such as generation, storage, conversion, transmission, protection, input and output of transient huge energy, combining the most advanced power technology, high-voltage technology, nuclear physics science and The high-tech frontier technology formed by the integration of microwave technology has broad application prospects in the fields of new smart grid, nuclear energy development, environmental protection, and n...

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Problems solved by technology

[0016] 1. Heat loss: When semiconductor devices work, voltage drop will inevitably occur. The static and dynamic heat loss generated by high current will cause a large temperature rise of the device, and its key indicators such as current flow, shutdown recovery, and blocking voltage will increase with temperature. High and drop, even failure in extreme cases

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