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A multi-band low-noise amplifier and its amplification method

A low-noise amplifier, amplifier technology, applied in low-noise amplifiers, amplifiers, power amplifiers and other directions, can solve problems such as circuit noise performance deterioration

Active Publication Date: 2022-03-25
GUANGZHOU HUIZHI MICROELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But generally speaking, when a MOS switch is introduced into the input matching, the on-resistance during turn-on will greatly deteriorate the noise performance of the circuit

Method used

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  • A multi-band low-noise amplifier and its amplification method
  • A multi-band low-noise amplifier and its amplification method
  • A multi-band low-noise amplifier and its amplification method

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Experimental program
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Embodiment Construction

[0036] Generally, for a radio frequency low noise amplifier, different circuit structures can be used according to the requirements of different communication protocols, such as frequency and bandwidth, so as to obtain the lowest noise and the best performance. For multi-band LNA, it is necessary to take into account the gain and noise of different frequency bands, and consider the constraints of power and chip area.

[0037] The realization of multi-band LNA can be divided into two schemes at present, the first scheme is an independent channel structure, and the second scheme is a shared channel structure. In the first solution, the working signals of different frequency bands are amplified by multiple independently biased low-noise amplifiers; for example, in the process of implementation, multiple independent low-noise amplifiers can be directly connected in parallel; or, in order to reduce power consumption , there will also be multiple switches connected in series with di...

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Abstract

The invention discloses a multi-band low-noise amplifier. The amplifier includes: N input circuits, N being a natural number greater than or equal to 2, N common-source transistors, N switches, common-gate transistors, and an output circuit, wherein: The N input circuits are used to receive N different frequency band signals; each of the common source transistors is used to perform first-stage amplification on a received frequency band signal to obtain a first-stage amplified signal, and then the first-stage The stage amplified signal is transmitted to the N-way switch; the N-way switch is used to select a channel of a frequency band signal from the channels of N frequency band signals, and transmit the corresponding first-stage amplified signal to the said channel through the selected channel. Co-gate transistor; the common-gate transistor is used to isolate the influence of the output circuit on the N input circuits, and transmit the first-stage amplified signal to the output circuit; the present invention also discloses a A multi-band low-noise amplification method.

Description

technical field [0001] The invention relates to the field of integrated circuit design of wireless communication system technology, in particular to a multi-band low noise amplifier and an amplification method. Background technique [0002] With the development of social economy, the demand for multi-band receiving terminals that can be compatible with different protocol standards is also increasing in the market. For multi-frequency receivers, the design of multi-band low-noise amplifiers is critical. For general radio frequency low noise amplifiers, different circuit structures will be used according to the frequency and bandwidth requirements of different communication protocols to obtain the lowest noise and the best performance. However, for a multi-band low noise amplifier (Low Noise Amplifier, LNA), it is necessary to take into account the gain and noise of different frequency bands, and consider the constraints of power and chip area, which undoubtedly increases the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03F1/02H03F1/26H03F1/48H03F1/56H03F3/193H03F3/21H03F3/45
CPCH03F1/0211H03F1/26H03F1/486H03F1/565H03F3/193H03F3/211H03F3/45179H03F2200/294
Inventor 何敏君彭洋洋王华江陈浩
Owner GUANGZHOU HUIZHI MICROELECTRONICS