GaN-based power device with inverted structure having graphene heat dissipation layer and preparation method of GaN-based power device

Abstract

The invention discloses a GaN-based power device with an inverted structure having a graphene heat dissipation layer and a preparation method of the GaN-based power device. The GaN-based power devicecomprises, distributed from bottom to top, a substrate, an insulating medium layer, an electrode bonding pad, a GaN-based HEMT device and graphene material, wherein the electrode bonding pad comprisesa source electrode bonding pad, a drain electrode bonding pad and a gate electrode bonding pad; the GaN-based HEMT device comprises an epitaxial layer structure, a gate electrode, a source electrodeand a drain electrode; and an electrode of the GaN-based HEMT device is bonded with the substrate through the electrode bonding pad, so that an inverted packaging structure is realized. The graphene material is adopted as a heat dissipation material on a substrate material of the inverted GaN-based HEMT device. The HEMT device is connected with the heat dissipation film through the electrode bonding pad, and graphene is adopted as a heat dissipation layer on the HEMT substrate in the inverted structure. The heat dissipation efficiency of the device is improved, and the long-term reliability ofthe device is ensured.

Description

technical field [0001] The invention belongs to the technical field of semiconductor microelectronics, and in particular relates to a flip-chip structure for improving HEMT thermal resistance of an AlGaN / GaN device through a graphene material. Background technique [0002] GaN materials have good thermal and electrical properties and chemical stability, such as wide band gap, high breakdown electric field, high thermal conductivity, corrosion resistance and radiation resistance, etc., and are ideal for preparing high frequency, high temperature, high voltage, high power devices ideal material. [0003] AlGaN / GaN heterojunction has extremely strong piezoelectric polarization and spontaneous polarization effects, forming a high concentration of two-dimensional electron gas (2DEG) at the heterojunction interface, high electron mobility transistor based on AlGaN / GaN heterojunction (HEMT) have broad application prospects in power and radio frequency devices. With the increase o...

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Problems solved by technology

[0004] The present invention aims at the problems of poor heat dissipation and low reliability of GaN power devices, and proposes a flip-chip structure using DLC ​​(diamond-like carbon) and graphene. The substrate uses DLC as an insulating heat dissipation material to improve the heat dissipation effect on the substrate. At the same time, The flip-chip structure realizes the connection between the epitaxial structure and the heat dissipation substrate, effectively improves the heat dissipation area, and homogenizes the distribution of the thermal field

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