Wafer local processing method

Abstract

The invention discloses a local treatment method for a wafer, belonging to the technical field of semiconductors. The local treatment method comprises the following steps: applying one surface of a to-be-treated wafer with the surface of a first cavity part having a formed groove; introducing a preset amount of corrosive liquid used for treatment of the surface of the wafer into the groove from afirst through hole; introducing a dynamic fluid into the first through hole so as to allow the dynamic fluid to push the corrosive liquid to flow in the groove and controlling the corrosive liquid inthe groove to flow at a preset speed; and pushing the corrosive liquid in the groove to a second through hole in virtue of the dynamic fluid so as to discharge the corrosive liquid from the groove. With the local treatment method provided by the invention, the movement of the corrosive liquid in can be effectively controlled, so the local corrosion depth of the surface of the wafer can be controlled; and thus, so contamination impurities in a wafer material in a given depth range can be extracted and detected.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a local wafer processing method. Background technique [0002] With the further reduction of the semiconductor size, the impurities contained in the wafer silicon material itself become a requirement for detection and monitoring in quality control. Wafer material is destructively inspected. [0003] Chinese patent application numbers 201210171681.9 and 201210088237.0 disclose a microchamber processing device for wafer processing, the microchamber processing device includes an upper chamber part and a lower chamber part, an upper chamber part and a lower chamber part Relatively movable between an open position for loading and / or removing the wafer and a closed position for receiving and processing the wafer driven by a driving device. When the upper chamber part and the lower chamber part are in the closed position, a microchamber is formed, and the wafer is placed in the...

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Problems solved by technology

[0004] When the processing fluid enters the microchamber through the inlet of the microchamber to process the wafer, the flow direction of the processing fluid is generally in a fixed direction, but there is no corresponding control mechanism to ensure the degree of reaction between the processing fluid and the wafer.

Although the existing technology can guarantee the extraction efficiency of surface pollutants as long as a sufficient amount of reaction time is given when extracting and detecting wafer surface contamination, the extraction and detection of impurities inside the wafer material When the liquid is needed to corrode the wafer material, different reaction levels will lead to a large error in the corrosion depth of the processing fluid on the wafer surface and it is difficult to control

In this way, when the contamination detection of the impurities inside the wafer material is carried out, the detection of the processing fluid collected after the reaction can only obtain the general qualitative situation of the impurity contamination inside the wafer material, and cannot accurately obtain the given depth inside the wafer material Quantitative situation of impurity contamination within the range, and further, it is impossible to obtain the distribution of impurity contamination at different depths in the wafer

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