TVS (Transient Voltage Suppressor) device with bidirectional high-snapback SCR characteristic and ultralow capacitance and manufacturing method thereof
A manufacturing method and ultra-low technology, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, electrical components, etc., can solve the problems of ultra-low residual voltage and ultra-low capacitance that cannot meet high-speed data communication ports, and achieve low packaging cost, The effect of low capacitance and obvious application advantages
Active Publication Date: 2018-08-21
SHANGHAI CHANGYUAN WAYON MICROELECTRONICS
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Problems solved by technology
At present, the protection of many ports tends to be bidirectional protection, but ordinary bidirectional TVS can no longer meet the ultra-low residual voltage and ultra-low capacitance requirements of high-speed data communication ports, so it is very urgent to develop bidirectional low residual voltage devices.
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[0039] Such as image 3 As shown, when positive voltage is applied to I / O1 on the front of the device and negative voltage is applied to I / 02, due to the existence of P buried layer, the path of current to the substrate is blocked, and the current can only pass through P+ / Pwell-2 / N type The forward diode D1 formed by the epitaxial layer 2 / Nwell / N+, because the Pwell-2 implantation dose is relatively light, and the resistivity of the N-type epitaxial layer 2 is as high as 200ohm.cm, so this diode has a good derating effect, and then the current The vertical PNPN SCR structure formed by metal connection through P+ / Pwell-2 / N buried layer / Pwell-1, because this structure has large snapback IV characteristics, the voltage can be swept back to 1-3v, so it has ultra-low residual pressure performance.
[0040] Conversely, when I / 02 is applied with a positive voltage, and when I / 01 is applied with a negative voltage, the N-type substrate and Pwell-1 are in a reverse bias state, and the...
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The invention discloses a TVS (Transient Voltage Suppressor) device with a bidirectional high-snapback SCR characteristic and ultralow capacitance and a manufacturing method thereof. The TVS device comprises a transverse PNPN structure on a GND-IO path and a longitudinal PNPN structure on an IO-GND path, wherein the transverse PNPN structure and the longitudinal PNPN structure are isolated by deepgrooves, and each PNPN structure is provided with a capacitance-reducing diode connected in parallel. According to the invention, the bidirectional high-snapback characteristic is realized by respectively using the transverse PNPN structure and the longitudinal PNPN structure, and the transverse PNPN structure and the longitudinal PNPN structure are respectively connected with capacitance-reducing diodes D1, D2 in series, thereby realizing a purpose of reducing the capacitance. In addition, the surface only needs to lead out one I / O1, the other I / O2 is led out from the GND, the packaging is simple and easier to implement, and the packaging cost is lower than that of a wire bonding mode with more IOs at the surface. The implementation of the design of the special structure enables the TVSdevice to be ultralow in capacitance and ultralow in residual voltage, so that the application advantages in protecting a high-frequency data interface circuit are very obvious.
Description
technical field [0001] The invention relates to the field of semiconductor protection devices, in particular to a TVS (TVS, Transient Voltage Suppressors) device with bidirectional large snapback SCR characteristics and ultra-low capacitance and a manufacturing method thereof. Background technique [0002] As the integration level of various ESD circuits continues to increase, the line width of integrated circuits also decreases. Transient voltages in the circuit, in the form of electrostatic discharge (ESD) or other forms, are therefore more susceptible to damage to electronic devices. A variety of multi-functional mobile terminal devices continue to emerge to meet people's increasing needs, and the corresponding functional interfaces are also constantly upgraded. USB is the most important communication interface for mobile phones. From USB 2.0 to the latest USB3.1, the data transmission The requirements are getting higher and higher, and the upgrade of the main chip puts ...
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IPC IPC(8): H01L27/02H01L21/8222
CPCH01L27/0255H01L27/0262H01L21/8222
Inventor 张啸苏海伟赵德益赵志方王允吕海凤霍田佳苏亚兵蒋骞苑
Owner SHANGHAI CHANGYUAN WAYON MICROELECTRONICS