Photolithographic technology method of ion implantation layers in HKMG technology

Abstract

The invention discloses a photolithographic technology method of ion implantation layers in HKMG technology. The method comprises steps of step 1, providing a semiconductor substrate and forming an ion implantation layer on the semiconductor substrate; step 2, forming a layer of base layer material layer on the surface of the ion implantation layer, wherein the base layer material layer encapsulates impurities on the surface of the ion implantation layer; step 3, coating photoresist on the surface of the base layer material layer; and step 4, carrying out photolithographic developing on the photoresist so as to form a phoresist graphic structure which defines an ion implantation region, wherein impurities on the surface of the ion implantation layer are encapsulated through the base layermaterial layer so that the impurities on the surface of the ion implantation layer are prevented from influencing the formation of the photoresist graphic structure. According to the invention, impurities on the surface of the ion implantation layer are prevented from influencing the formation of the photoresist graphic structure; particularly, acid chemical substances and alkaline chemical substances can be prevented from influencing the photoresist graphic structure; stripping of the photoresist and defects of photoresist foot-shaped graphics can be separately eliminated; and finally, the yield of the product can be increased.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor integrated circuit, in particular to a photolithography process method for an ion implantation layer in an HKMG process. Background technique [0002] HKMG has a gate dielectric layer with a high dielectric constant (HK) and a metal gate (MG), so it is usually abbreviated as HKMG in the art. In the HKMG process, it is necessary to form a high dielectric constant (HK) gate dielectric layer and form a metal gate at the same time. In the existing HKMG process, the metal gate last process is usually used. In the metal gate last process, a dummy polysilicon gate is usually required. That is, the pseudo-polysilicon gate, which uses the pseudo-polysilicon gate to form the gate dielectric layer, channel region, and source-drain region of the device, and then replaces the metal gate, that is, removes the pseudo-polysilicon gate, and fills the removed area of ​​the pseudo-polysilicon gate with m...

AI Technical Summary

Problems solved by technology

However, in fact, due to the residual impurities on the surface of the ion implantation layer 102, various adverse effects are often produced on the pattern structure of the photoresist 103.

Photoresist peeling will occur in the region of the dotted circle 106, that is, the photoresist on the top of the acidic chemical substance 104 will be stripped, which is unfavorable for the situation that the photoresist needs to be formed on the top; The photoresist will remain to create a photoresist foot pattern, i.e. the photoresist on top of the alkaline chemistry 105 will remain, which is not good for the situation where the photoresist needs to be removed on top of the alkaline chemistry 105

[0006] It can be seen from the above that the existing method will form photoresist stripping and foot-shaped pattern defects, which will eventually lead to deviations in the definition of ion implantation regions, and finally affect the yield of products

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