72results about How to "Influence" patented technology

Every time density correction information corresponding to a colorimetric value of a patch is acquired, the time when the density correction information is acquired and the type of a printing medium on which the patch is printed are accumulated in association in a memory. The type of a medium for printing is specified by a user; density correction information acquired at the most up-to-date time for each chromatic color ink available for the medium of that type is read from the memory; it is determined whether or not the most up-to-date time when the density correction information is acquired for each of the chromatic color inks available for the specified medium is the same time; if the most up-to-date times are the same, density correction is performed on image data, using a correction table that corresponds to the density correction information acquired at the most up-to-date time.

Every time density correction information corresponding to a colorimetric value of a patch is acquired, the time when the density correction information is acquired and the type of a printing medium on which the patch is printed are accumulated in association in a memory. The type of a medium for printing is specified by a user; density correction information acquired at the most up-to-date time for each chromatic color ink available for the medium of that type is read from the memory; it is determined whether or not the most up-to-date time when the density correction information is acquired for each of the chromatic color inks available for the specified medium is the same time; if the most up-to-date times are the same, density correction is performed on image data, using a correction table that corresponds to the density correction information acquired at the most up-to-date time.

A method for manufacturing a semiconductor device having steps of forming an amorphous semiconductor on a substrate having an insulating surface; patterning the amorphous semiconductor to form plural first island-like semiconductors; irradiating a linearly condensed laser beam on the plural first island-like semiconductors while relatively scanning the substrate, thus crystallizing the plural first island-like semiconductors; patterning the plural first island-like semiconductors that have been crystallized to form plural second island-like semiconductors; forming plural transistors using the plural second island-like semiconductors; and forming a unit circuit using a predetermined number of the transistors, where the second island-like semiconductors used for the predetermined number of the transistors are formed from the first island-like semiconductors that are different from each other.

The present invention relates to a blade for a wind power plant with an assembly face for mounting in a circular pitch bearing, whose pitch axis is angled relative to the longitudinal axis of the blade, and wherein the blade comprises a root part with an approximately elliptic cross-section, in which root part the assembly face is arranged. The invention further relates to a wind power plant in general having a pitch- adjustable blade mounted in a pitch bearing such that the distance between the outermost part of the blade and the tower is increased when the leading edge of the blade is pitched up in the wind. This is accomplished in that the longitudinal axis of the blade is angled in a particular way compared to its pitch axis. The invention also relates to a method of controlling a wind power plant, including to increase the rotor area and / or increasing the distance between the outermost part of at least one blade and the tower by regulating, during operation, the pitch of a blade about a pitch axis which is angled relative to the longitudinal axis of the blade.

A method of fabricating a group-III nitride semiconductor laser device includes: preparing a substrate of a hexagonal group-III nitride semiconductor, where the substrate has a semipolar primary surface; forming a substrate product having a laser structure, an anode electrode and a cathode electrode, where the laser structure includes the substrate and a semiconductor region, and where the semiconductor region is formed on the semipolar primary surface; scribing a first surface of the substrate product in part in a direction of the a-axis of the hexagonal group-III nitride semiconductor; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar.

The invention firstly provides a wearable touch sensor with area perception, and the touch sensor comprises a coordinate system established according to an orthographic projection area area of wearable equipment, wherein the above coordinate system establishes virtual coordinates covering the surface of the wearable equipment. The touch sensor also comprises a plurality of power generation units arranged on the surface of the wearable equipment; each power generation unit is correspondingly provided with an address memory, and the address memory is used for storing coordinate values of each power generation unit in a coordinate system; when each power generation unit generates an electric signal, the electric signal is processed by the signal processing circuit to generate a clear digital signal, and the processor classifies the received coordinate information according to horizontal coordinates or vertical coordinates; the coordinate values of the same horizontal coordinates or vertical coordinates form a group, then the processor compares the vertical coordinates or horizontal coordinates in the same group and the minimum value and the maximum value obtained after comparison, the weighted average of the difference values of all the coordinates is calculated, the minimum weighted average is the adjacent nearest point, and the contact area can be formed by connecting the connecting lines between the nearest points.

A three-dimensional memory device and a manufacturing method thereof are provided. The three-dimensional memory device includes a plurality of bottom source lines extending in a first horizontal direction, a stacked structure disposed on the bottom source lines, a plurality of bit lines extending in a second horizontal direction, and a plurality of pillar structures passing through the stacked structure. The stacked structure includes a plurality of composite structures spaced apart from one another and respectively located at different levels. The composite structures each include a gate conductive layer and a ferroelectric layer surrounding the gate conductive layer. Each of the pillar structures connected between the corresponding bit line and the corresponding bottom source line includes a barrier layer, a gate insulating layer, and a channel layer. The ferroelectric layer of each composite structure is insulated from the gate insulating layer of the pillar structure by the barrier layer.