71results about How to "Influence" patented technology

Every time density correction information corresponding to a colorimetric value of a patch is acquired, the time when the density correction information is acquired and the type of a printing medium on which the patch is printed are accumulated in association in a memory. The type of a medium for printing is specified by a user; density correction information acquired at the most up-to-date time for each chromatic color ink available for the medium of that type is read from the memory; it is determined whether or not the most up-to-date time when the density correction information is acquired for each of the chromatic color inks available for the specified medium is the same time; if the most up-to-date times are the same, density correction is performed on image data, using a correction table that corresponds to the density correction information acquired at the most up-to-date time.

A functional material with a CuO and In2O3 micro-nano heterogeneous periodic structure of the invention and a preparation method thereof belong to the technical field of semiconductor heterostructure material. The functional material is assembled from bump portions and pit portions in periodic alternation; a bump portion is formed by stacking of nano CuO, and a pit portion is formed by stacking of nano In2O3; and a bump CuO and an adjacent In2O3 pit constitute a period. The preparation method comprises the steps of: precipitating Cu2O and In(OH)3 alternately under effect of square wave potential in a solution containing nitrates; and carrying out high temperature treatment on the Cu2O and In(OH)3 to obtain the material with CuO and In2O3 heterogeneous periodic structure. The functional material prepared by the invention has excellent optical, electrical and gas sensitive properties and high stability; and the heterostructure material with different periods prepared by growth voltages with different frequencies has characteristics of controllable growth area and adjustable periodicity.

Every time density correction information corresponding to a colorimetric value of a patch is acquired, the time when the density correction information is acquired and the type of a printing medium on which the patch is printed are accumulated in association in a memory. The type of a medium for printing is specified by a user; density correction information acquired at the most up-to-date time for each chromatic color ink available for the medium of that type is read from the memory; it is determined whether or not the most up-to-date time when the density correction information is acquired for each of the chromatic color inks available for the specified medium is the same time; if the most up-to-date times are the same, density correction is performed on image data, using a correction table that corresponds to the density correction information acquired at the most up-to-date time.

The invention relates to a formation method of an LDMOS (Lateral Diffusion MOS) transistor and an LDMOS transistor. The formation method of the LDMOS transistor comprises the steps of providing a semiconductor substrate, wherein the semiconductor substrate is provided with a fin portion, and the fin portion is internally provided with a well region, forming a drift region in the fin portion, wherein the drift region surrounds the drift region, forming a gate structure stretching across the fin portion, wherein the gate structure covers the top and side walls of the fin portion, and the gate structure partially covers the drift region, forming a source electrode material layer and a drain electrode material layer in the fin portion at two sides of the gate structure, and the drain electrode material layer is located inside the drift region, and carrying out ion implantation on the source electrode material layer and the drain electrode material layer so as to form a source electrode and a drain electrode. The performance of the LDMOS transistor can be improved by adopting the method provided by the invention.

A method for manufacturing a semiconductor device having steps of forming an amorphous semiconductor on a substrate having an insulating surface; patterning the amorphous semiconductor to form plural first island-like semiconductors; irradiating a linearly condensed laser beam on the plural first island-like semiconductors while relatively scanning the substrate, thus crystallizing the plural first island-like semiconductors; patterning the plural first island-like semiconductors that have been crystallized to form plural second island-like semiconductors; forming plural transistors using the plural second island-like semiconductors; and forming a unit circuit using a predetermined number of the transistors, where the second island-like semiconductors used for the predetermined number of the transistors are formed from the first island-like semiconductors that are different from each other.

The invention discloses a manufacturing method of a target assembly. The manufacturing method comprises the steps that a target made of molybdenum silicon material is provided; a to-be-welded surface of the target is subjected to sand blasting; the target is subjected to washing treatment after the sand blasting; the to-be-welded surface of the target is subjected to activating treatment after the washing treatment; a metal coating layer is formed on the to-be-welded surface of the target by adopting a chemical plating technology after the activating treatment; and the target is welded to a back plate by utilizing the metal coating layer. With the adoption of the manufacturing method of the target assembly, the target assembly formed by the molybdenum silicon material has sufficient binding rate and bonding strength.

The present invention relates to a blade for a wind power plant with an assembly face for mounting in a circular pitch bearing, whose pitch axis is angled relative to the longitudinal axis of the blade, and wherein the blade comprises a root part with an approximately elliptic cross-section, in which root part the assembly face is arranged. The invention further relates to a wind power plant in general having a pitch- adjustable blade mounted in a pitch bearing such that the distance between the outermost part of the blade and the tower is increased when the leading edge of the blade is pitched up in the wind. This is accomplished in that the longitudinal axis of the blade is angled in a particular way compared to its pitch axis. The invention also relates to a method of controlling a wind power plant, including to increase the rotor area and / or increasing the distance between the outermost part of at least one blade and the tower by regulating, during operation, the pitch of a blade about a pitch axis which is angled relative to the longitudinal axis of the blade.

A method of fabricating a group-III nitride semiconductor laser device includes: preparing a substrate of a hexagonal group-III nitride semiconductor, where the substrate has a semipolar primary surface; forming a substrate product having a laser structure, an anode electrode and a cathode electrode, where the laser structure includes the substrate and a semiconductor region, and where the semiconductor region is formed on the semipolar primary surface; scribing a first surface of the substrate product in part in a direction of the a-axis of the hexagonal group-III nitride semiconductor; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar.

The invention discloses a rod body piston resistance-increase yielding anchor rod and a construction method. The problem is solved that a resistance-increase structure of an anchor rod is easily blocked. By arranging a sleeve outside an anchor rod body and changing the thickness of the wall of the sleeve, the thickness of the wall of the sleeve gradually changes, and accordingly a yielding effectis realized. In the technical scheme, the anchor rod comprises the sleeve, the sleeve is of a hollow structure, and sleeves the rod body, the end, serving as an anchoring segment, of the rod body extends into the tail end of the sleeve and is connected with a resistance-increase structure, and the other end of the rod body extends to the outer side of the head end of the sleeve and is connected with an anchor head. The thickness of the wall of the part, corresponding to the anchoring segment of the rod body, of the sleeve is gradually decreased from head end to tail end, and when the anchor rod gradually pushes a soil body forwards, the wall of the sleeve deforms and is lengthened to realize yielding.

The invention discloses an LDMOS transistor and an LDMOS transistor forming method. The LDMOS transistor forming method comprises the steps of: providing a semiconductor substrate which is provided with fin parts; forming a drift region in each fin part; forming gate structures crossing the fin parts, wherein the gate structures cover the top part and side walls of the fin parts, and the gate structures cover the drift regions partially; forming source material layers and drain material layers in the fin parts on both sides of each gate structure, wherein the drain material layers are positioned in the drift regions; and carrying out ion implantation in the source material layers to form sources, and carrying out ion implantation in the drain material layers to form a drain. The LDMOS transistor formed by adopting the LDMOS transistor forming method has improved performance.

The invention provides an antistatic macromolecule protective film which comprises an antistatic original film and a release film, wherein the antistatic original film is an external coating type antistatic original film; each of the upper layer and the lower layer of the original film is coated with an external coating; combination of the external coating type antistatic original film and an antistatic adhesive is the main reason for improving the antistatic effect of an antistatic adhesive layer, which is the largest breakthrough on research and development; the condition that the base material texture has certain degree of influence on the conductivity of the adhesive layer is judged; the resistance value of the surface of the adhesive layer is successfully decreased from (10<10>-10<11>) to (10<6>-10<9>); the antistatic original film is coated with the antistatic adhesive layer, and is combined with the release film together; the adhesive in the antistatic adhesive layer is added with a metallic antistatic agent; the antistatic agent adopts the lithium antistatic agent; the metallic lithium is large in electric charge density, has low possibility of being polarized, is high in stability, and can be mixed with the adhesive to form a good conductive grid; the antistatic adhesive layer and one external coating of the antistatic original film are combined together through an enhanced adhesion layer.

The invention firstly provides a wearable touch sensor with area perception, and the touch sensor comprises a coordinate system established according to an orthographic projection area area of wearable equipment, wherein the above coordinate system establishes virtual coordinates covering the surface of the wearable equipment. The touch sensor also comprises a plurality of power generation units arranged on the surface of the wearable equipment; each power generation unit is correspondingly provided with an address memory, and the address memory is used for storing coordinate values of each power generation unit in a coordinate system; when each power generation unit generates an electric signal, the electric signal is processed by the signal processing circuit to generate a clear digital signal, and the processor classifies the received coordinate information according to horizontal coordinates or vertical coordinates; the coordinate values of the same horizontal coordinates or vertical coordinates form a group, then the processor compares the vertical coordinates or horizontal coordinates in the same group and the minimum value and the maximum value obtained after comparison, the weighted average of the difference values of all the coordinates is calculated, the minimum weighted average is the adjacent nearest point, and the contact area can be formed by connecting the connecting lines between the nearest points.

The invention relates to an integrated circuit arrangement for a position sensor for measuring angles or distances, wherein the circuit arrangement comprises:a measurement substrate, which defines a measurement plane and which is configured such that it comprises a plurality of corners;at least three Hall elements, which are arranged on the measurement substrate such that areas of the Hall elements, which are sensitive to a magnetic field, extend in the measurement plane and / or form a part of the measurement plane, and that a virtual polygon, which is formed by the Hall elements, is rotated with respect to the measurement substrate such that the Hall elements are each located at an outer edge of the measurement substrate and have a distance to a center of an edge of the corresponding outer edge amounting to at maximum 25% of a total length of the corresponding outer edge, whereinthe Hall elements are, in an intended use of the circuit arrangement during the measurement, configured to respectively output an output signal, which corresponds to a magnetic field strength of a magnet to be detected; anda processing electronic system, to which the output signals of the Hall sensors are delivered in the intended use of the circuit arrangement during the measurement.

A three-dimensional memory device and a manufacturing method thereof are provided. The three-dimensional memory device includes a plurality of bottom source lines extending in a first horizontal direction, a stacked structure disposed on the bottom source lines, a plurality of bit lines extending in a second horizontal direction, and a plurality of pillar structures passing through the stacked structure. The stacked structure includes a plurality of composite structures spaced apart from one another and respectively located at different levels. The composite structures each include a gate conductive layer and a ferroelectric layer surrounding the gate conductive layer. Each of the pillar structures connected between the corresponding bit line and the corresponding bottom source line includes a barrier layer, a gate insulating layer, and a channel layer. The ferroelectric layer of each composite structure is insulated from the gate insulating layer of the pillar structure by the barrier layer.

The invention relates to the field of biotechnology and particularly relates to a recombinant interleukin 18 as well as a preparation method and application thereof. The rhIL-18 provided in the invention is mutated from a serine to an amino acid residue capable of being hydroxylated at a 10 site of N-terminus; hrIL-18 shown in SEQ ID NO: 1 is used for experiments and solves problems of low solubility, poor stability, low bioactivity and the like of wild IL-18; the hrIL-18 shown in SEQ ID NO: 1 is easier to purify and is suitable for industrial production. The rhIL-18 provided in the invention can inhibit generation of microtubules in human endothelial cells, can promote activity of NK cells and promote formation of IFN-gamma, but does not affect the activity of human retinal pigment epithelial cells, so as to indicate that the rhIL-18 can be used as a medicine for treating neovascularization diseases and / or malignant tumors.