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Functional material with CuO and In2O3 micro-nano heterogeneous periodic structure and preparation method thereof

A technology of periodic structure and functional materials, applied in nanotechnology, nanotechnology, nanotechnology, etc. for materials and surface science, can solve the problem of unsatisfactory light utilization rate gas sensitivity, low light utilization rate, small specific surface area, etc. problem, to achieve the effect of high sensitivity, controllable growth area, stable and ordered structure

Inactive Publication Date: 2012-10-24
JILIN UNIV
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  • Abstract
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Problems solved by technology

However, there are also some shortcomings, such as the rapid recombination of electron-hole pairs in the photovoltaic effect, and the low utilization rate of light have always been the difficulties of research.
[0004] There are many preparation methods for these two semiconductor materials, including physical methods and chemical methods, including evaporation condensation method, ion implantation method, template method, precipitation method, sol-gel method and microwave radiation method, etc., but these methods can only Synthesis of CuO or In 2 o 3 Single oxide material, unable to prepare CuO and In 2 o 3 Functional material with periodic ordered array structure of two oxides
Moreover, the photoelectric materials prepared by the above-mentioned traditional methods are not ideal for light utilization and gas sensitivity due to their small specific surface area.

Method used

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  • Functional material with CuO and In2O3 micro-nano heterogeneous periodic structure and preparation method thereof
  • Functional material with CuO and In2O3 micro-nano heterogeneous periodic structure and preparation method thereof
  • Functional material with CuO and In2O3 micro-nano heterogeneous periodic structure and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0033] 1) Use deionized water, adjust the pH value to 4.0 with nitric acid, take 30mL, add 0.2174g copper nitrate and 0.1718g indium nitrate, and sonicate for 10min to make a uniform electrolyte.

[0034] 2) In a temperature-controllable growth chamber, use the surface oxidized silicon wafer as the substrate, place two copper foil electrodes with a thickness of about 30 μm in parallel on the substrate, and the distance between the two electrodes is 5-10mm, and drop electrolyte between the electrodes, cover On the coverslip, blot excess electrolyte solution from the edge of the substrate with filter paper.

[0035] 3) The electrolyte was refrigerated and frozen by using a low-temperature constant temperature circulator and a semiconductor refrigeration element, so that the ice layer evenly covered the substrate, and the growth temperature was lowered to minus 3.5 degrees for 20 minutes.

[0036] 4) Apply a 0.5Hz square wave voltage (0.8V-1.4V) across the electrodes to make Cu ...

Embodiment 2

[0041] 1) Use deionized water, adjust the pH value to 3.0 with nitric acid, take 30mL, add 0.2174g copper nitrate and 0.1718g indium nitrate, and ultrasonicate for 10min to make a uniform electrolyte.

[0042] 2) In a temperature-controllable growth chamber, use the surface oxidized silicon wafer as the substrate, place two copper foil electrodes with a thickness of about 30 μm in parallel on the substrate, and the distance between the two electrodes is 5-10mm, and drop electrolyte between the electrodes, cover On the coverslip, blot excess electrolyte solution from the edge of the substrate with filter paper.

[0043] 3) Use a low-temperature constant temperature circulator and a semiconductor refrigeration element to refrigerate and freeze the electrolyte, so that the ice layer evenly covers the substrate, and lower the growth temperature to minus 3.5 degrees for 20 minutes.

[0044] 4) Apply a 0.5Hz square wave voltage (0.8V-1.4V) across the electrodes to make Cu 2 O and I...

Embodiment 3

[0049]1) Use deionized water, adjust the pH value to 2.0 with nitric acid, take 30mL, add 0.2174g copper nitrate and 0.1718g indium nitrate, and sonicate for 10min to make a uniform electrolyte.

[0050] 2) In a temperature-controllable growth chamber, use the surface oxidized silicon wafer as the substrate, place two copper foil electrodes with a thickness of about 30 μm in parallel on the substrate, and the distance between the two electrodes is 5-10mm, and drop electrolyte between the electrodes, cover On the coverslip, blot excess electrolyte solution from the edge of the substrate with filter paper.

[0051] 3) Use a low-temperature constant temperature circulator and a semiconductor refrigeration element to freeze the electrolyte, so that the ice layer evenly covers the substrate, and reduce the growth temperature to minus 3.5 degrees for 20 minutes.

[0052] 4) Apply a 0.5Hz square wave voltage (0.8V-1.4V) across the electrodes to make Cu 2 O and In(OH) 3 Periodic alt...

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Abstract

A functional material with a CuO and In2O3 micro-nano heterogeneous periodic structure of the invention and a preparation method thereof belong to the technical field of semiconductor heterostructure material. The functional material is assembled from bump portions and pit portions in periodic alternation; a bump portion is formed by stacking of nano CuO, and a pit portion is formed by stacking of nano In2O3; and a bump CuO and an adjacent In2O3 pit constitute a period. The preparation method comprises the steps of: precipitating Cu2O and In(OH)3 alternately under effect of square wave potential in a solution containing nitrates; and carrying out high temperature treatment on the Cu2O and In(OH)3 to obtain the material with CuO and In2O3 heterogeneous periodic structure. The functional material prepared by the invention has excellent optical, electrical and gas sensitive properties and high stability; and the heterostructure material with different periods prepared by growth voltages with different frequencies has characteristics of controllable growth area and adjustable periodicity.

Description

technical field [0001] The invention belongs to the technical field related to semiconductor heterostructure functional materials, and relates to the method of electrochemical deposition to prepare In 2 o 3 And related technologies of CuO micro-nano heterogeneous periodic structure functional materials. Background technique [0002] Functional nanomaterials have always been concerned by people, especially the preparation of semiconductor micro-nano heterostructure materials with good photoelectric and gas-sensing properties is the current research focus. A semiconductor heterostructure is a structure that combines two different types of semiconductor materials. The electronic behavior in this structure, including light irradiation, temperature, and the interaction between gas and electrons, and other physical properties are similar to those of a single semiconductor material. obviously different. In recent years, the research on many semiconductor oxide functional materia...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D9/04C25D5/18C25D5/50B82Y30/00B82Y40/00
Inventor 张明喆高亮
Owner JILIN UNIV
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