Preparation method of palladium diselenide two-dimensional crystalline state film layer

A thin-film layer and crystalline technology, which is applied in the field of preparation of double-layer thin-film structures, can solve the problems of low efficiency and large-scale adoption, and the lack of preparation of two-dimensional crystalline palladium diselenide thin films.
CN108486531AActive Publication Date: 2018-09-04INST OF PHYSICS - CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
INST OF PHYSICS - CHINESE ACAD OF SCI
Publication Date
2018-09-04

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Abstract

The invention provides a preparation method of a palladium diselenide two-dimensional crystalline state film layer. The preparation method comprises the following steps that 100, a base with silicon carbide as a base body and a graphene layer manufactured on the surface is prepared; 200, the temperature of the base is kept within the growth temperature range of selenium and palladium; and 300, selenium atoms and palladium atoms are generated from pure selenium and pure palladium in an evaporation way according to the reaction ratio and deposited on the base, and the selenium atoms and the palladium atoms are reacted on the base to form the two-dimensional ordered crystalline state film layer composed of the atoms, wherein in the film layer, the selenium atoms and the palladium atoms are distributed in a selenium-palladium-selenium overlaid state. By means of the method, the current situation that only palladium diselenide blocks can be obtained in the prior art is solved, the atomic-scale palladium diselenide film layer can be obtained, and convenience is brought to research on physical properties of palladium diselenide and relevant devices by sufficiently utilizing palladium diselenide.
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Description

technical field

[0001] The invention relates to the field of semiconductor preparation, in particular to a preparation method for obtaining a double-layer film structure of palladium diselenide in a two-dimensional crystal state. Background technique

[0002] Since the discovery of graphene film in 2004, it has become a research hotspot due to its unique electronic structure and physical properties. Graphene has excellent physical properties such as extremely high electron mobility, high thermal conductivity, high mechanical strength, and light transmittance, making it widely used in integrated circuits, gas molecular sensors, supercapacitors, flexible transparent electrodes, and terahertz devices. important application prospects. However, since graphene itself has no energy gap, it cannot build a pn junction like traditional semiconductors, which greatly limits the application of graphene in semiconductors and other fields.

[0003] Based on the excellent characteristics ...

Claims

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