Preparation method of palladium diselenide two-dimensional crystalline state film layer

A thin-film layer and crystalline technology, which is applied in the field of preparation of double-layer thin-film structures, can solve the problems of low efficiency and large-scale adoption, and the lack of preparation of two-dimensional crystalline palladium diselenide thin films.

Active Publication Date: 2018-09-04
INST OF PHYSICS - CHINESE ACAD OF SCI
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Problems solved by technology

However, there is currently no mature method for obtaining the thickness of the palladium diselenide atomic group, and the palladium diselenide thin film can only be obtained by tape stripping, which is inefficient and impossible to be widely used in industry
[0005] In addition, as a semiconductor two-dimensional material, the controllable modulation of the semiconducto

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  • Preparation method of palladium diselenide two-dimensional crystalline state film layer
  • Preparation method of palladium diselenide two-dimensional crystalline state film layer
  • Preparation method of palladium diselenide two-dimensional crystalline state film layer

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Embodiment Construction

[0022] Such as figure 1 Shown, the preparation method of the palladium diselenide two-dimensional crystalline film layer of an embodiment of the present invention generally comprises the steps:

[0023] Step 100, preparing a base with silicon carbide as the substrate and a graphene layer on its surface;

[0024] The base here is obtained after processing the 6H-silicon carbide substrate in a vacuum environment; in addition to the specified graphene layer that needs to be obtained, it is also necessary to perform a flattening operation on the generated graphene layer. The specific processing process includes: first The 6H-silicon carbide is heated and degassed at 600°C, and then heated repeatedly at 1250-1300°C until a flat graphene layer is formed on the surface of the 6H-silicon carbide.

[0025] Step 200, keeping the temperature of the base within the growth temperature range of selenium and palladium;

[0026] It is found through experiments that selenium and palladium ca...

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Abstract

The invention provides a preparation method of a palladium diselenide two-dimensional crystalline state film layer. The preparation method comprises the following steps that 100, a base with silicon carbide as a base body and a graphene layer manufactured on the surface is prepared; 200, the temperature of the base is kept within the growth temperature range of selenium and palladium; and 300, selenium atoms and palladium atoms are generated from pure selenium and pure palladium in an evaporation way according to the reaction ratio and deposited on the base, and the selenium atoms and the palladium atoms are reacted on the base to form the two-dimensional ordered crystalline state film layer composed of the atoms, wherein in the film layer, the selenium atoms and the palladium atoms are distributed in a selenium-palladium-selenium overlaid state. By means of the method, the current situation that only palladium diselenide blocks can be obtained in the prior art is solved, the atomic-scale palladium diselenide film layer can be obtained, and convenience is brought to research on physical properties of palladium diselenide and relevant devices by sufficiently utilizing palladium diselenide.

Description

technical field [0001] The invention relates to the field of semiconductor preparation, in particular to a preparation method for obtaining a double-layer film structure of palladium diselenide in a two-dimensional crystal state. Background technique [0002] Since the discovery of graphene film in 2004, it has become a research hotspot due to its unique electronic structure and physical properties. Graphene has excellent physical properties such as extremely high electron mobility, high thermal conductivity, high mechanical strength, and light transmittance, making it widely used in integrated circuits, gas molecular sensors, supercapacitors, flexible transparent electrodes, and terahertz devices. important application prospects. However, since graphene itself has no energy gap, it cannot build a pn junction like traditional semiconductors, which greatly limits the application of graphene in semiconductors and other fields. [0003] Based on the excellent characteristics ...

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Application Information

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IPC IPC(8): C23C14/24C23C14/30C30B25/18C30B29/46C30B29/68
CPCC23C14/0021C23C14/24C23C14/30C30B25/183C30B29/46C30B29/68
Inventor 李恩王东飞范朋王业亮高鸿钧
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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