Method for determining sensitive parameters of FeRAM (Ferroelectric Random Access Memory)

A technology for sensitive parameters and parameters, applied in static memory, instruments, etc., can solve problems such as uncertain device parameters and changes

Inactive Publication Date: 2018-09-04
XIANGTAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] Embodiments of the present invention provide a method and device for determining sensitive parameters of FeRAM, which are used to solve the problems in the prior art that there is only one qualitative analysis for determining sensitive parameters of FeRAM without quantitative judgment, and it is impossible to determine whether the device is from good to failure. More specific changes in the parameters of the process

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  • Method for determining sensitive parameters of FeRAM (Ferroelectric Random Access Memory)
  • Method for determining sensitive parameters of FeRAM (Ferroelectric Random Access Memory)
  • Method for determining sensitive parameters of FeRAM (Ferroelectric Random Access Memory)

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Embodiment Construction

[0038] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.

[0039] 1) The technical principle of FeRAM

[0040] When 60Coγ is irradiated, there will be interaction between γ-rays and ferroelectric materials to generate electron-hole pairs, and the electron-hole pairs introduce interface state trap charges in the gate oxygen and field oxygen through drift, diffusion and recombination. It traps charges with the oxide to form an additional electric field and recombination center, which changes the ele...

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Abstract

The invention discloses a method for determining sensitive parameters of a FeRAM (Ferroelectric Random Access Memory) and belongs to the fields of space radiation damage effects and radiation hardening. The method comprises the following steps: backward reading first data from a FeRAM completing radiation, matching the backward read data and a second data written into the FeRAM before radiation, and determining the FeRAM matched to be qualified as a first FeRAM; acquiring a parameter DC and a parameter AC of the first FeRAM by virtue of a testing instrument when each set radiation dose point is reached, respectively analyzing the parameter DC and the parameter AC by virtue of a QMU formula, and determining that one parameter included in the parameter DC and the parameter AC fails when a confidence ratio determined by the QMU formula is less than 1.

Description

Technical field [0001] The invention belongs to the field of space radiation damage effects and anti-radiation reinforcement, and more specifically relates to a method and device for determining FeRAM sensitive parameters. Background technique [0002] The spacecraft has been working in a space radiation environment for a long time, and space radiation damage is one of the main reasons that cause spacecraft failures in orbit. The complexity of the space radiation environment, interacting with new technologies, new materials, new devices, and new states of spacecraft, has led to the complexity of space radiation effects and their impacts. New problems have emerged one after another, posing a serious threat to the reliable operation of space systems. Threat. [0003] In recent years, due to the rapid development of global aerospace technology, higher requirements have been put forward on memory. The main requirements are strong radiation resistance, low power consumption, long life,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C29/56
CPCG11C29/56
Inventor 郭红霞秦丽盛江坤欧阳晓平丁李利钟向丽郭维新李波张阳琚安安魏佳男
Owner XIANGTAN UNIV
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