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Photodiode and image sensor of an image sensor

A photodiode and image sensor technology, applied in diodes, circuits, electrical components, etc., can solve the problem of poor color resolution of image sensors, and achieve the effect of reducing crosstalk and improving spectral resolution.

Inactive Publication Date: 2020-05-19
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Summary
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The present invention aims to solve the technical problem of poor color resolution of image sensors in the prior art, and provides a photodiode of an image sensor and an image sensor

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  • Photodiode and image sensor of an image sensor

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Embodiment Construction

[0014] The specific embodiments of the present invention will be further described below in conjunction with the accompanying drawings.

[0015] Since the energy of light decays exponentially with the increase of incident depth:

[0016] I 0 (x)=I 0 exp(-αX);

[0017] where I 0 is the initial incident light intensity, I 0 (x) is the light intensity at the incident depth X, and α is the light attenuation coefficient.

[0018] The attenuation coefficient α is related to the frequency of light, as shown in Table 1, the light wave and absorption depth: the incidence coefficient increases with the increase of photon frequency, that is, the shorter the wavelength, the faster the attenuation speed of light in silicon. Among them, at 0.3 microns below the silicon surface, more than half of the blue-violet light has been absorbed by the silicon material, and the incident depth of the red light with the same proportion of energy loss reaches 3 microns.

[0019] Table 1: Light wave...

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Abstract

The present invention provides a photodiode of an image sensor. The photodiode includes a silicon substrate and a silicon epitaxial layer grown on the silicon substrate, wherein the silicon epitaxial layer includes a first doped region and a second doped region arranged from top to bottom. Two doped regions, a third doped region and a fourth doped region, the fourth doped region is in contact with the silicon substrate, the first doped region, the second doped region, the third doped region and Any two adjacent doped regions of different doping types in the fourth doped region form a depletion region, and the first doped region and the silicon substrate are respectively connected to a high potential.

Description

technical field [0001] The invention relates to the field of image sensors, in particular to a photodiode of an image sensor and an image sensor. Background technique [0002] Since the pixels of the image sensor only record the light intensity, not the wavelength of light, it is necessary to coat a bandpass filter on the surface of the pixel to selectively transmit the spectrum of the required band, so as to distinguish the light waves passing through the pixel. For example, a color camera needs to decompose the incident light into three primary colors, and finally the computer calculates the wavelength of the pixel light through interpolation. Therefore, the filtering ability of the filter directly affects the accuracy of information acquisition. In the multi-spectral and hyper-spectral detection technology, the light pass bandwidth and light cut-off speed of the filter directly determine the spectral resolution of the image sensor. The technical threshold for filter mate...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0352H01L31/11H01L27/146
CPCH01L27/14643H01L31/03529H01L31/11
Inventor 王欣洋周泉李扬马成武大猷
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI