Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A high-frequency terahertz wave generation device using Raman characteristic peak difference frequency

A technology for generating devices and characteristic peaks, which is applied in the field of microwave photonics, can solve problems such as limited lasers and large-scale applications, and achieve the effect of reducing experimental costs and equipment requirements, and enriching Raman spectrum components

Active Publication Date: 2020-12-25
UNIV OF SHANGHAI FOR SCI & TECH
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method requires ultra-high-power carbon dioxide lasers or tunable lasers as excitation light sources to generate high-frequency terahertz radiation, which is limited by the use of lasers, which greatly limits its large-scale application.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A high-frequency terahertz wave generation device using Raman characteristic peak difference frequency
  • A high-frequency terahertz wave generation device using Raman characteristic peak difference frequency
  • A high-frequency terahertz wave generation device using Raman characteristic peak difference frequency

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The idea, specific structure and technical effects of the present invention will be further described below in conjunction with the accompanying drawings, so as to fully understand the purpose, features and effects of the present invention.

[0023] figure 1 It is a structural block diagram of a high-frequency terahertz wave generating device using Raman characteristic peak difference frequency in an embodiment of the present invention. figure 2 It is a schematic diagram of the optical path of the high-frequency terahertz wave generating device using Raman characteristic peak difference frequency in the embodiment of the present invention.

[0024] like figure 1 As shown, the high-frequency terahertz wave generating device 100 using Raman characteristic peak difference frequency in this embodiment includes: a pulsed laser oscillator 10, a pulse width stretcher 20, a preamplifier optical path 30, a first pulse width compression device 40 , main amplification optical p...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
wavelengthaaaaaaaaaa
Login to View More

Abstract

The invention provides a high-frequency terahertz wave generation device by using Raman characteristic peak difference frequency. The device is characterized by comprising a pulse laser oscillator, afront amplification light path, a main amplification light path and a gallium selenide quartz plate. The pulse laser oscillator is used for generating a pulse laser; the front amplification light pathis connected with an output port of the pulse laser oscillator and used for amplifying the power of the pulse laser and obtaining a high-power laser with the power larger than a power threshold valueof stimulated Raman scattering; the main amplification light path is connected with an output port of the front amplification light path and used for amplifying the power of the high-power laser andconducting stimulated Raman scattering at the same time to obtain a laser containing Raman characteristic peaks of different wavebands; the gallium selenide quartz plate and an output port of the mainamplification light path are correspondingly arranged, and the gallium selenide quartz plate is used for modulating the Raman characteristic peaks to make the Raman characteristic peaks of differentwavebands have nonlinear difference frequency effect to obtain high-frequency terahertz waves. The high-frequency terahertz wave generation device is not limited by an ultra-high-power excitation light source, the nonlinear effect does not need to be inhibited, and the component of the Raman spectrum generated through stimulated Raman scattering is rich.

Description

technical field [0001] The invention belongs to the technical field of microwave photonics, and in particular relates to a high-frequency terahertz wave generating device using Raman characteristic peak difference frequency. Background technique [0002] The frequency band of a single terahertz pulse can cover the range from GHz to tens of THz, which is convenient for analyzing the spectral properties of substances in a large range. Therefore, terahertz wave can become a complementary technology of infrared spectroscopy and Raman spectroscopy in terms of spectroscopy. In the 1960s, the successful development of lasers accelerated the development of nonlinear optical technology and provided conditions for people to study new methods of generating terahertz waves. The emergence of laser diodes and more new types of nonlinear crystals has also enabled people to use nonlinear optical methods to obtain terahertz radiation. Although terahertz technology is developing rapidly, th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/35H01S1/02
CPCG02F1/353H01S1/02
Inventor 李敏李振宇夏宇贺明洋袁帅曾和平
Owner UNIV OF SHANGHAI FOR SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products