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Preparation method of resistive transition structure unit

A structural unit and resistive switching technology, applied in the field of bionic devices, can solve the problems of poor controllability and fatigue resistance of quantized conductance, and difficulty in practical application, and achieve the effect of improving resistance transition characteristics and controllability

Inactive Publication Date: 2018-09-14
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the controllability and fatigue resistance of the quantized conductance of the current resistance-switching structural unit are poor, and it is difficult for practical application

Method used

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  • Preparation method of resistive transition structure unit
  • Preparation method of resistive transition structure unit
  • Preparation method of resistive transition structure unit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] In this embodiment, the preparation process of the resistive structural unit is as follows:

[0043] (1) The bottom electrode adopts a Pt conductive substrate with a thickness of 50nm; use magnetron sputtering to grow hafnium oxide (HfO) with a thickness of 8nm on the bottom electrode 2 ) as a resistive layer;

[0044](2) Use a photolithography instrument to remove the glue and develop it, and perform photolithography treatment on the surface of the resistive layer to obtain a dot pattern with a diameter of 50um; use a conductive probe with a diameter of 10nm to pre-energize the dot area. Processing, this is the embodiment, using the C-AFM mode in the atomic force microscope for power-on pretreatment, applying a scanning voltage of 6V, and scanning times 10 times, pits are formed on the surface of the resistive layer.

[0045] The topography of the resistive layer surface after the above pretreatment is as follows: figure 2 shown. from figure 2 It can be seen that p...

Embodiment 2

[0051] In this example, the preparation process of the resistive structural unit is basically the same as in Example 1, except that in step (2), the C-AFM mode in the atomic force microscope is used for power-on pretreatment, and a scanning voltage of 6V is applied. , the number of scans is 2 times.

[0052] Similar to Example 1, pits were formed on the surface of the resistive layer, and the pits were in the shape of an inverted cone with a height of 0.7 nm.

[0053] The B1500A semiconductor analyzer is used to test the stability of the quantized conductance of the resistive structural unit. The results are similar to those shown in Example 1. After repeated tests, the quantized conductance values ​​of the resistive structural unit are basically the same, that is, the resistive structural unit The quantized conductance of the cell exhibits stability.

Embodiment 3

[0055] In this example, the preparation process of the resistive structural unit is basically the same as that of Example 1, except that in step (2), the C-AFM mode in the atomic force microscope is used for power-on pretreatment, and a scanning voltage of 6V is applied. , the number of scans is 20 times.

[0056] Similar to Example 1, pits were formed on the surface of the resistive layer, and the pits were in the shape of an inverted cone with a height of 1.9 nanometers.

[0057] The B1500A semiconductor analyzer was used to test the stability of the quantized conductance of the resistive structural unit. The results were similar to those shown in Example 1. After repeated tests, the quantized conductance values ​​of the resistive structural unit were basically the same, that is, the resistive structural unit The quantized conductance of the cell exhibits stability.

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Abstract

The invention provides a preparation method of a resistive transition structure unit. The method comprises steps as follows: a certain region is selected from the surface of a resistive transition layer, power is supplied between the region and a bottom electrode for pretreatment, the surface of the other region on the surface of the resistive transition layer is subjected to insulating treatment,oxygen element in a specific local area in the resistive transition layer is changed into oxygen to escape into air, the number of oxygen vacancies is increased, and meanwhile, inverted conical pitsare formed on the treatment surface of the resistive transition layer; after a top electrode is prepared, an inverted conical electrode can be obtained, so that a vertical channel facilitating formation of oxygen vacancy nanowires is formed, the formation positions and the number of the oxygen vacancy nanowires are fixed, controllability of conductive properties of quanta in the resistive transition structure unit is realized, and the conductive stability of the quanta in the resistive transition structure unit is improved.

Description

technical field [0001] The invention relates to the fields of nanotechnology, information storage technology and artificial intelligence, especially the use of quantum conductance for multi-value storage, logic devices and bionic devices. Background technique [0002] Memory is the carrier of information recording and plays an important role in semiconductor devices. With the advent of the era of big data, the amount of global information is increasing exponentially, and the importance of memory is even more prominent. The existing technology mainly increases the integration density and storage capacity of the chip by reducing the size of the device. As the size shrinks to 10 nanometers, Moore's Law begins to encounter more and more serious challenges, such as heat generation, power consumption, and process difficulty. series of problems, and the von Neumann bottleneck problem. [0003] Resistive variable memory is an emerging information technology, which has many advanta...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/24H10N70/8418H10N70/011
Inventor 陈祺来李润伟刘钢薛武红
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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