Device for preparing fully deposited silicon carbide coatings by chemical vapor deposition

Abstract

The invention relates to a device for preparing a fully deposited silicon carbide coating by chemical vapor deposition, and belongs to the technical field of silicon carbide coating preparation. According to the main technical scheme, the device for preparing the fully deposited silicon carbide coating by the chemical vapor deposition includes a cavity, a support ring, gas flow interfering bodiesand supporting members. An air inlet device is arranged at the top of the cavity, and an air outlet device is arranged at the bottom of the cavity. The outer side wall of the support ring is connectedto the inner wall of the cavity, and the cavity is divided into an upper cavity and a lower cavity which communicate with each other in the middle. One ends of the gas flow interfering bodies are disposed on the support ring and arranged in the direction from the support ring to the top of the cavity, and the number of gas flow interfering bodies is greater than or equal to three. The supportingmembers are disposed at the bottom of the cavity for supporting a sample of a coating to be deposited and the sample is located in the lower cavity. The device for preparing the fully deposited silicon carbide coating by the chemical vapor deposition is capable of obtaining the fully deposited silicon carbide coating on the surface of the sample.

Description

technical field [0001] The invention relates to the technical field of silicon carbide coating preparation, in particular to a device for preparing fully deposited silicon carbide coatings by chemical vapor deposition. Background technique [0002] Silicon carbide (SiC) materials have many excellent mechanical and physical and chemical properties, such as high specific strength and specific modulus, low density, high temperature resistance, oxidation resistance, semiconductor properties, etc., so they are favored in the fields of high temperature structures and microelectronics. , especially in the semiconductor production process, graphite plates with silicon carbide coatings are important consumables. [0003] In the prior art, chemical vapor deposition (Chemical Vapor Deposition, CVD) is a kind of industrialization technique most suitable for preparing high-quality silicon carbide coating, and specific preparation process is to inject vapor phase deposition gas from the t...

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