Device for preparing fully deposited silicon carbide coatings by chemical vapor deposition

Abstract

The invention relates to a device for preparing a fully deposited silicon carbide coating by chemical vapor deposition, and belongs to the technical field of silicon carbide coating preparation. According to the main technical scheme, the device for preparing the fully deposited silicon carbide coating by the chemical vapor deposition includes a cavity, a support ring, gas flow interfering bodiesand supporting members. An air inlet device is arranged at the top of the cavity, and an air outlet device is arranged at the bottom of the cavity. The outer side wall of the support ring is connectedto the inner wall of the cavity, and the cavity is divided into an upper cavity and a lower cavity which communicate with each other in the middle. One ends of the gas flow interfering bodies are disposed on the support ring and arranged in the direction from the support ring to the top of the cavity, and the number of gas flow interfering bodies is greater than or equal to three. The supportingmembers are disposed at the bottom of the cavity for supporting a sample of a coating to be deposited and the sample is located in the lower cavity. The device for preparing the fully deposited silicon carbide coating by the chemical vapor deposition is capable of obtaining the fully deposited silicon carbide coating on the surface of the sample.

Description

technical field [0001] The invention relates to the technical field of silicon carbide coating preparation, in particular to a device for preparing fully deposited silicon carbide coatings by chemical vapor deposition. Background technique [0002] Silicon carbide (SiC) materials have many excellent mechanical and physical and chemical properties, such as high specific strength and specific modulus, low density, high temperature resistance, oxidation resistance, semiconductor properties, etc., so they are favored in the fields of high temperature structures and microelectronics. , especially in the semiconductor production process, graphite plates with silicon carbide coatings are important consumables. [0003] In the prior art, chemical vapor deposition (Chemical Vapor Deposition, CVD) is a kind of industrialization technique most suitable for preparing high-quality silicon carbide coating, and specific preparation process is to inject vapor phase deposition gas from the t...

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Problems solved by technology

[0004] However, the inventor found in the process of invention that the prior art has the following technical defects: the device for preparing silicon carbide coatings in the prior art does not fully consider the distribution and control of the gas flow field in the reaction chamber, and the vapor deposition gas It enters the chamber from the top of the chamber, and the gas will directly impact the surface of the substrate to be deposited with silicon carbide coating, and then be discharged from the bottom of the chamber. The exhaust hole at the bottom of the chamber is exhausted, resulting in the failure of the deposited layer, or only a small part of silicon carbide can be deposited on the surface of the substrate, and the deposition rate is very low; in addition, when preparing a silicon carbide coating for a larger-sized substrate, the above Defects will be more obvious, and full deposition cannot be achieved, that is, coatings cannot be deposited on both the upper and lower surfaces of the graphite substrate, and when using a graphite plate without a fully deposited silicon carbide coating as a consumable for the production of semiconductors, the graphite plate is consumed particularly fast. Especially in the potassium nitride atmosphere, it will be consumed faster, which will lead to an increase in the cost of semiconductor production, and in severe cases will lead to failure of semiconductor production

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