Capacitor device of semiconductor integrated circuit and fabrication method of capacitor device

Abstract

The invention provides a capacitor device of a semiconductor integrated circuit and a fabrication method of the capacitor device. The device adopts a lamination structure of three sacrificial layers and three support layers; after the sacrificial layers are removed, a first top support assistance layer and a second top support assistance layer are deposited before openings of the support layers are opened by etching to increase etching obstruction; and the residual thickness of the support layers is increased. The heights of capacitor holes can be effectively increased, so that the vertical capacitor height is increased; the surface area of a plate electrode is increased; and a higher capacitance value can be obtained in the same unit area. The support layers with the residual thickness of10-50nm can be obtained; a vertical capacitor structure is more steady; and a risk of collapse of a higher capacitor is greatly reduced.

Description

technical field [0001] The invention belongs to the field of design and manufacture of semiconductor integrated circuit devices, and in particular relates to a capacitance device of a semiconductor integrated circuit and a manufacturing method thereof. Background technique [0002] As one of the necessary components in semiconductor integrated circuits, capacitors have functions such as voltage adjustment and filtering in circuits, so they are widely used in integrated circuits. For example, capacitors are dynamic random access memory (DRAM), static random access memory (SRAM) and An essential component of some microprocessors. [0003] Dynamic Random Access Memory (DRAM for short) is a semiconductor storage device commonly used in computers, and is composed of many repeated storage units. Each memory cell generally includes a capacitor 10 and a transistor 11; the gate of the transistor 11 is connected to the word line 13, the drain / source of the transistor 11 is connected ...

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Problems solved by technology

[0007] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a capacitor device for semiconductor integrated circuits and its manufacturing method, which is used to solve the problem in the prior art that capacitors with relatively large heights are prone to collapse risks

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