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A kind of high thermal stability phosphate phosphor and preparation method thereof

A phosphor and phosphate technology, which is applied in the field of high thermal stability phosphate phosphor and its preparation, can solve problems such as the reduction of luminous intensity of luminescent materials, and achieve the effects of good thermal stability, low preparation temperature and low price of raw materials

Active Publication Date: 2021-03-23
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In general, the luminous intensity of luminescent materials decreases with increasing temperature due to the increase of nonradiative recombination rate and the decrease of radiative recombination rate

Method used

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  • A kind of high thermal stability phosphate phosphor and preparation method thereof
  • A kind of high thermal stability phosphate phosphor and preparation method thereof
  • A kind of high thermal stability phosphate phosphor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Follow Y 0.999 NbO(PO 4 ) 2 :0.001Eu 3+ The stoichiometric ratio weighs Y 2 o 3 , Nb 2 o 5 , (NH 4 ) 2 HPO 4 and Eu 2 o 3 , the molar ratio between them is 0.4995:0.5:2:0.0005. After fully grinding and mixing, place it in a corundum crucible, then put it in a high-temperature furnace and bake it at 1400°C for 2 hours in an air atmosphere, and slowly cool it to room temperature with the crucible , to obtain high thermal stability phosphate phosphor.

[0020] From figure 1 It can be seen from the figure that the emission of the phosphor powder prepared in this embodiment is the narrow-band emission of trivalent europium, and the emission peak is 612nm. From figure 2 It can be seen that the emission intensity at 612nm increases gradually with the increase of temperature, reaches the maximum at 100°C, and then the intensity decreases gradually. The emission intensity at 160°C is 100.7% of that at room temperature, and at 200°C The emission intensity is 92.1%...

Embodiment 2

[0022] Follow Y 0.99 NbO(PO 4 ) 2 :0.01Eu 3+ The stoichiometric ratio weighs Y 2 o 3 , Nb 2 o 5 , (NH 4 ) 2 HPO 4 and Eu 2 o 3 , the molar ratio between them is 0.495︰0.5︰2︰0.005. After fully grinding and mixing, place it in a corundum crucible, then put it in a high-temperature furnace and bake it at 1350°C for 3 hours in an air atmosphere, and slowly cool it to room temperature with the crucible , to obtain high thermal stability phosphate phosphor.

[0023] The emission of the phosphor powder prepared in this embodiment is the narrow-band emission of trivalent europium, and the emission peak is 612nm. The emission intensity at 612nm increases gradually with the increase of temperature, reaches the maximum value at 100°C, and then the intensity decreases gradually. The emission intensity at 160°C is 101.5% of the emission intensity at room temperature, and the emission intensity at 200°C is at room temperature. 92.7% of the emission intensity at that time, indic...

Embodiment 3

[0025] Follow Y 0.9 NbO(PO 4 ) 2 :0.1Eu 3+ The stoichiometric ratio weighs Y 2 o 3 , Nb 2 o 5 , NH 4 h 2 PO 4 and Eu 2 o3 , the molar ratio between them is 0.45︰0.5︰2︰0.05. After fully grinding and mixing, place it in a corundum crucible, then put it into a high-temperature furnace and bake it at 1300°C for 4 hours in an air atmosphere, and slowly cool it to room temperature with the crucible , to obtain high thermal stability phosphate phosphor.

[0026] The emission of the phosphor powder prepared in this embodiment is the narrow-band emission of trivalent europium, and the emission peak is 612nm. The emission intensity at 612nm increases gradually with the increase of temperature, reaches the maximum at 100°C, and then the intensity decreases gradually. The emission intensity at 160°C is 101.3% of that at room temperature, and the emission intensity at 200°C is 101.3% of that at room temperature. 93.1% of the emission intensity at that time, indicating that the ...

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Abstract

The invention discloses high-thermal-stability phosphate fluorescent powder and a preparation method thereof. The chemical expression of the phosphate fluorescent powder is Al-xRO(PO4)2:xEu<3+>, wherein A refers to Y or La, R refers to V, Nb or Ta, and x=0.001-0.1. The preparation method of the phosphate fluorescent powder includes the steps: weighing corresponding raw materials according to the stoichiometric ratio of Al-xRO(PO4)2:xEu<3+>; sintering uniform mixture of the raw materials in a high temperature furnace at high temperature in air atmosphere, and slowly cooling the mixture to roomtemperature to obtain the phosphate fluorescent powder. The raw materials include A-containing oxide, R-containing oxide, a compound containing [PO4]3- and europium oxide. The fluorescent powder has high thermal stability, 612nm emission intensity basically remains unchanged or is higher than room-temperature emission intensity from the room temperature of 25 DEG C to 160 DEG C, and 200 DEG C emission intensity can be basically kept 90% or more of the room-temperature emission intensity.

Description

technical field [0001] The invention relates to a high thermal stability phosphate fluorescent powder and a preparation method thereof, belonging to the technical field of rare earth luminescent materials. Background technique [0002] White light LED is a solid-state semiconductor device that converts electrical energy into white light. It has the advantages of energy saving, environmental protection, convenient use, safety, long life, high luminous efficiency, and small size. The fourth generation of lighting sources, its wide use has opened a new era of "green lighting". [0003] The basic structure of the LED is a P-N junction, and its basic working principle is the injection electroluminescence of electrons and holes. Part of the injected electric energy is converted into visible light emission, and part of the energy is converted into thermal energy through resistance heating, non-radiative transition or reabsorption of chip materials, resulting in an increase in the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/81
CPCC09K11/7795
Inventor 余华季振国苏伟涛陈雷锋钟家松赵红挺
Owner HANGZHOU DIANZI UNIV