A control circuit, power amplifier circuit and control method
A power amplification circuit and control circuit technology, applied in amplifiers, amplifiers with semiconductor devices/discharge tubes, amplifier types, etc., can solve the problems of reducing the maximum output power of GSM radio frequency power amplifiers, reducing the efficiency of GSM radio frequency power amplifiers, etc. , to achieve the effect of increasing the maximum output power, reducing the area occupied by the chip, and improving work efficiency
Active Publication Date: 2022-04-19
SHANGRUI MICROELECTRONICS SHANGHAI
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Problems solved by technology
[0003] However, at present, the output power of the GSM RF power amplifier is controlled through the LDO. Because the power transistor of the LDO will produce a voltage drop, the collector voltage Vout of the GSM RF power amplifier is always lower than the power supply voltage VBAT, thereby reducing the GSM RF power. The maximum output power of the amplifier reduces the efficiency of the GSM RF power amplifier
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[0036] Usually, power amplifiers include GSM radio frequency power amplifiers, etc., figure 1 It is a schematic diagram of the power control circuit of the GSM radio frequency power amplifier, figure 1 The power control process of the power control circuit shown specifically includes: when the reference control voltage VRAMP increases, the source terminal voltage Vout of the power transistor increases, which in turn causes the collector voltage of the GSM radio frequency power amplifier to increase, causing the GSM radio frequency power amplifier to increase. The output power increases according to the square relationship with the drain terminal voltage Vout; when the reference control voltage VRAMP decreases, the source terminal voltage Vout of the power transistor decreases, which in turn causes the collector voltage of the GSM RF power amplifier to decrease, resulting in a GSM RF power The output power of the amplifier decreases as the square of the drain voltage Vout. Amo...
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The invention discloses a control circuit, which is applied to a power amplifying circuit. The power amplifying circuit includes a first transistor, a second transistor, and a third transistor; the third transistor is directly connected to a power supply via an inductor; the control circuit It includes: a waveform shaping circuit, which is used to generate a first current by using a reference voltage control signal of a power amplifier circuit, and compare the first current with a reference current value to obtain a second current; use the second current to generate a mirror current, and then use Mirroring the current to obtain a first gate voltage; the first gate voltage is used by the second transistor to control the first transistor to amplify the input signal to obtain an output signal; a voltage generating circuit is used to generate a first gate voltage using the first gate voltage two gate voltages, and use the second gate voltage to control the third transistor to output the output signal satisfying the stable output characteristic. The invention also discloses a power amplifier circuit and a control method at the same time.
Description
technical field [0001] The invention relates to a power amplifying circuit, in particular to a control circuit, a power amplifying circuit and a control method. Background technique [0002] At present, as the Silicon On Insulator (SOI, Silicon On Insulator) process becomes more and more mature, implementing a radio frequency power amplifier (PA, Power Amplifier) using the SOI process has more and more cost advantages. Global System for Mobile Communication (GSM, Global System for Mobile Communication) power amplifier is a kind of radio frequency power amplifier. In the power control circuit of the existing commonly used GSM radio frequency power amplifier, usually, the reference control voltage VRAMP passes through the low dropout regulator (LDO, Low DropOut regulator) controls the collector voltage of the GSM RF power amplifier, and then realizes the control of the output power of the GSM RF power amplifier. The LDO includes an error amplifier and a power transistor. ...
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IPC IPC(8): H03F1/02H03F3/195H03F3/213
CPCH03F1/0211H03F3/195H03F3/213H03F2200/451
Inventor 李咏乐苏强奕江涛
Owner SHANGRUI MICROELECTRONICS SHANGHAI