A growing device for large-aperture Cz monocrystal and a growing method thereof

Abstract

An optical path of a temperature sensor is set to pass through an observation window of a crystal growth furnace and be aimed at a boundary portion of the inner surface of a crucible and the surface of molten liquid, so that electric signals sent from the sensor and subjected to photo-electric conversion are monitored in a crystal growing period to obtain a temperature change of the boundary portion, thus suppressing the temperature of the portion in a certain range to facilitate stable crystal growth. For crystal growth, super-cooled advancement makes the crystal growth starting from the wallof the crucible (8) unsuitable for large crystal growth. For the temperature of a boundary line (9) between the wall of the crucible (8) and the molten liquid (13), the temperature sensor (1) is aimed at the boundary line (9) through the observation window (11) to monitor the temperature, and before a temperature zone for beginning of crystal growth starting from the wall of the crucible (8), signals are sent from a control unit (4) to a power supply (5) to raise the temperature of the furnace, thus suppressing crystal growth starting from the wall of the crucible (8) and safely producing large-aperture crystals.

Description

technical field [0001] The invention relates to a single crystal growth device and a single crystal growth method. Background technique [0002] In the single crystal growth apparatus and the single crystal growth method, the CZ method is generally used to produce the material single crystal of the semiconductor silicon wafer and the material wafer used as the material wafer of the single crystal silicon type solar cell. [0003] However, looking at the relationship between the diameter of the crucible used and the diameter of the crystal, a crucible with an inner diameter of 600 mm is used for a Φ200 mm single crystal, and a crucible with an inner diameter of about 1000 mm or more is used for a Φ300 mm single crystal. That is, generally, the diameter of the pulled single crystal is about one-third of the diameter of the crucible. Therefore, if the aperture of the single crystal becomes larger, a furnace that can accommodate a large-diameter crucible is required. If the cr...

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Problems solved by technology

Therefore, since a crucible with an inner diameter of 600 mm has not been used to grow a single crystal with a diameter of 380 mm for silicon parts of a semiconductor processing device, if it is necessary to grow a single crystal with a large diameter, the crucible will be enlarged and the furnace will be increased. The increase in the size of the internal parts and the increase in the size of the single crystal growth furnace equipment as a whole will immediately require investment in equipment for the increase in size of the crystallization, accompanied by an increase in costs

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