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Method for depositing cobalt film and cobalt oxide film through magnetron sputtering

A technology of magnetron sputtering and cobalt oxide film, applied in the field of sputtering coating, can solve the problems of depositing cobalt film, etc., and achieve the effect of good uniformity, simple operation and reduction of magnetic shielding effect

Inactive Publication Date: 2018-10-02
SHAANXI NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But for the cobalt target material, it is difficult to deposit cobalt film and cobalt oxide film by conventional magnetron sputtering method. If the magnetic field on the surface of the cobalt target is too small, it will not be possible to deposit cobalt films and cobalt oxide films by magnetron sputtering

Method used

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  • Method for depositing cobalt film and cobalt oxide film through magnetron sputtering

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] Wipe the glass substrate with a dust-free paper dipped in ethanol, then ultrasonically clean the glass substrate in acetone and ethanol for 30 minutes, dry it with nitrogen, and install it on the sample holder of the magnetron sputtering equipment. A 3mm thick aluminum disc is placed on top of the target gun, and then the cobalt target is placed on the aluminum disc, which is the same size as the cobalt target. Close the vacuum chamber cover of the magnetron sputtering equipment, and use a mechanical pump and a molecular pump to vacuum the deposition chamber to 5.0×10 -4 Pa, then open the argon ventilation valve, and open the mass flow meter, control the argon gas flow rate to 30.0sccm, first adjust the deposition chamber pressure to 2.0Pa, sputtering power is 30W start, then adjust the deposition chamber pressure to 0.6Pa, sputter Radiation power to 110W, pre-sputtering for 1 minute to remove contamination on the surface of the cobalt target, then open the baffle to st...

Embodiment 2

[0015] In this embodiment, the argon ventilation valve and the oxygen ventilation valve are opened, and the mass flow meter is turned on, and the oxygen flow rate is controlled to be 10.0 sccm and the argon flow rate is 20.0 sccm. cobalt oxide film.

Embodiment 3

[0017] In this example, the aluminum disc in Example 1 was replaced with a copper disc with a thickness of 3 mm, and other steps were the same as in Example 1 to obtain a cobalt oxide film with a thickness of 310-320 nm.

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Abstract

The invention discloses a method for depositing a cobalt film and a cobalt oxide film through magnetron sputtering. According to the method, a non-ferromagnetic metal wafer with a certain thickness, such as a copper wafer and an aluminum wafer is inserted between a target gun and a cobalt target, so that the magnetic screening effect of the cobalt target can be reduced, and therefore the cobalt film and the cobalt oxide film can be successfully deposited through sputtering. The method has the advantages that the operation is simple, the prepared cobalt film and cobalt oxide film are compact, good in uniformity and good in binding force with a substrate.

Description

technical field [0001] The invention belongs to the technical field of sputtering coating, in particular to a method for preparing a cobalt film and a cobalt oxide film by magnetron sputtering. Background technique [0002] Magnetron sputtering technology can prepare decorative films, hard films, corrosion-resistant friction films, superconducting films, magnetic films, optical films, and various films with special functions. It is a very effective film deposition method. It is widely used in industrial fields. The films obtained by magnetron sputtering have strong adhesion. The basic principle of magnetron sputtering is to use a magnetic field to change the direction of electron movement, confine and prolong the trajectory of electrons, improve the ionization rate of electrons to the working gas and effectively use the energy of electrons, so that positive ions bombard the target. Target sputtering is more efficient. But for the cobalt target material, it is difficult to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/18C23C14/08
CPCC23C14/35C23C14/0036C23C14/085C23C14/185
Inventor 高斐高蓉蓉武鑫王昊旭雷婕
Owner SHAANXI NORMAL UNIV