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N-type SnSe thermoelectric material and preparation method thereof

A thermoelectric material, N-type technology, applied in thermoelectric device node lead-out materials, thermoelectric device manufacturing/processing, chemical instruments and methods, etc., can solve problems such as hindering electron transmission, reducing electrical conductivity, etc., and achieve electrical performance improvement , The effect of improving thermoelectric performance

Active Publication Date: 2018-10-02
BEIHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The conventional preparation methods of N-type SnSe in the prior art include fusion synthesis + spark plasma sintering and high-energy ball milling. Their defect is that polycrystalline SnSe is prepared, and a large number of grain boundaries and defects are introduced, which hinder the transmission of electrons and reduce the electrical conductivity. Rate

Method used

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  • N-type SnSe thermoelectric material and preparation method thereof
  • N-type SnSe thermoelectric material and preparation method thereof
  • N-type SnSe thermoelectric material and preparation method thereof

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preparation example Construction

[0026] The present invention also provides a preparation method of the N-type SnSe thermoelectric material, comprising the following steps:

[0027] Mixing Sn, Se and SnBr to obtain a mixed material, the atomic molar ratio of Sn, Se and Br in the mixed material is 1:0.97~0.99:0.01~0.03;

[0028] The mixed material is synthesized according to a vertical gradient single temperature zone cooling method to synthesize an N-type SnSe thermoelectric material.

[0029] The present invention mixes Sn, Se and SnBr to obtain a mixed material, and the atomic molar ratio of Sn, Se and Br in the mixed material is 1:0.97-0.99:0.01-0.03.

[0030] In the present invention, the mass purity of the Sn and Se is independently preferably greater than 99.99%, and the SnBr 2 The mass purity is preferably greater than 99%.

[0031] In the present invention, the atomic molar ratio of Sn, Se and Br in the mixed material is preferably 1:0.98:0.02. In the preparation process of the present invention, t...

Embodiment 1

[0048] Sn and Se blocks with a purity greater than 99.99% and SnBr with a purity greater than 99% 2 The mixed material is obtained by mixing the atomic molar ratio of Sn, Se and Br in a ratio of 1:0.97:0.03;

[0049] The mixed material is synthesized according to a vertical gradient single temperature zone cooling method to synthesize an N-type SnSe thermoelectric material.

[0050] The vertical gradient single temperature zone cooling method specifically includes the following steps:

[0051] 1) Put the above-mentioned mixed material into a small quartz tube (5mm in diameter) with a tapered front end, and evacuate the small quartz tube containing the mixed material until the vacuum degree is less than 10 -2 Pa, filled with argon, and then evacuated to a vacuum degree of less than 10 -3 Pa, a small quartz tube sealed with a flame;

[0052] 2) Place the small quartz tube obtained in step 1) in a large quartz tube with a diameter greater than 5 mm, and carry out secondary vac...

Embodiment 2～5

[0057] The atomic molar ratios of Sn, Se and Br in Examples 2 to 5 are 1:0.975:0.025, 1:0.98:0.02, 1:0.985:0.015 and 1:0.99:0.01 respectively, and the conditions in Example 1 of the remaining steps are the same . Table 1 shows the carrier concentration and the highest ZT value in Examples 1-5.

[0058] Carrier concentration and the highest ZT value in Table 1 embodiment 1~5

[0059]

[0060]

[0061] It can be seen from Table 1 that the atomic molar ratio of Sn, Se and Br in the mixed material is 1:0.97~0.99:0.01~0.03, that is, the molar percentage of the Br component varies from 1% to 3%, and the carrier concentration of the material varies from 8.3 E18~1.21E19cm -3 , and it is an electron, indicating that the prepared material is an N-type semiconductor material. The carrier fluctuation directly affects the final performance value ZT value. The range of ZT value is 2.5-2.8, and the change value is 0.3. The ZT value of all examples is much higher than that of N-type ...

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Abstract

The invention provides an N-type SnSe thermoelectric material, belonging to the technical field of energy materials. The N-type SnSe thermoelectric material is composed of Sn, Se and Br atoms, and anatomic molar ratio of the Sn, Se and Br is 1:0.97-0.99: 0.01-0.03; the N-type SnSe thermoelectric material is monocrystalline, and unit cell parameters abc of a crystal are 11.48346 angstroms, 4.14846angstroms and 4.43524 angstroms respectively, and axial angles alpha, beta and gamma are 90 degrees; and a ZT value of the N-type SnSe thermoelectric material is 2.0 to 2.8. The N-type SnSe thermoelectric material prepared by the invention is monocrystalline, eliminates the influence of grain boundaries and impurities on electron transport, significantly improves the electrical performance, and realizes the improvement of thermoelectric performance of N-type material components of a thermoelectric device based on the SnSe crystals.

Description

technical field [0001] The invention relates to the technical field of energy materials, in particular to an N-type SnSe thermoelectric material and a preparation method thereof. Background technique [0002] Thermoelectric energy conversion technology is a technology that uses functional materials to directly convert thermal energy to electrical energy. A basic thermoelectric power generation unit is composed of a P-type thermoelectric semiconductor material and an N-type thermoelectric semiconductor material placed in parallel, and then the two ends of the PN-type material are welded together with a conductive module. The components of thermoelectric power generation are composed of a large number of basic thermoelectric power generation units electrically connected in series and thermally connected in parallel. The energy conversion efficiency of a thermoelectric module is determined by the temperature difference between the two ends of the module and the performance mer...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/16H01L35/34C01B19/00H10N10/852H10N10/01
CPCC01B19/007H10N10/852H10N10/01
Inventor 赵立东常诚
Owner BEIHANG UNIV
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