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A RF mems switch based on the upper electrode structure without release holes

An electrode structure and release hole technology, applied in circuits, relays, electrical components, etc., can solve the problems of high driving voltage, high insertion loss, low isolation, etc., and achieve low driving voltage, low insertion loss, and improve yield. Effect

Active Publication Date: 2020-06-09
ZHONGBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a radio frequency MEMS switch based on an upper electrode structure without a release hole to solve the problems of high insertion loss, low isolation and high driving voltage of the existing radio frequency MEMS switch

Method used

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  • A RF mems switch based on the upper electrode structure without release holes
  • A RF mems switch based on the upper electrode structure without release holes
  • A RF mems switch based on the upper electrode structure without release holes

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Embodiment Construction

[0030] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0031] In the description of the present invention, it should be understood that the orientations or positional relationships indicated by the terms "center", "upper", "lower", "front", "rear", "left", "right" etc. are based on the attached The orientation or positional relationship shown in the figure is only for the convenience of describing the present invention and simplifying the description, and does not indicate or imply that the referred combination or element must have a specific orientation, be constructed and operated in a spec...

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Abstract

The invention relates to a radio frequency MEMS switch on the basis of an upper electrode structure without a release hole. The radio frequency MEMS switch comprises a substrate, microwave transmission lines, a driving electrode, an upper electrode, a lower electrode assembly, air bridges and a package cap which covers the components above. The microwave transmission lines comprise signal lines and ground lines, fractures are arranged in the middles of the microwave transmission lines, and the driving electrode is disposed at the fractures; the upper electrode, the lower electrode assembly andthe air bridges are arranged on the microwave transmission lines, one end of the upper electrode is connected with the signal lines on one side, the lower electrode assembly is connected with the signal lines on the other side, the other end of the upper electrode is suspended above the driving electrode and extends to the upper portion of the lower electrode assembly, and the air bridges are communicated with the ground wires. The radio frequency MEMS switch has the advantages that there is no need to form the release hole, the switch is simple and practical, convenience is provided for impedance matching, the insertion loss is low, the isolation degree is high, the driving voltage is low, the switch is suitable for mass production, and the yield of the switch is increased. The package cap can prevent microwave signals from being leaked in the form of radiation, microwave shielding can be achieved, and improvement of the microwave performance of the switch is facilitated.

Description

technical field [0001] The invention belongs to the field of electronic components, in particular to a radio frequency MEMS switch based on an upper electrode structure without release holes. Background technique [0002] The RF MEMS switch is a microwave switch made using MEMS technology, which transmits or isolates microwave signals through the capacitance formed by metal-metal contact or metal-insulating medium-metal. Compared with traditional solid-state electronic devices, it has the advantages of small insertion loss, low power consumption, low cost, and high linearity, and can be widely used in mobile phone communications, aerospace, radar, antennas and other fields. [0003] At present, mature RF MEMS switch products have been introduced to the market in the world, and they are still in the prototype development stage in China. Domestic RF MEMS switch research institutions mainly include China Power Group 13th, China Power Group 55th, Tsinghua University, Peking Uni...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01H59/00H01P1/10H01P1/12
CPCH01H59/0009H01P1/10H01P1/127
Inventor 吴倩楠刘秋慧李孟委
Owner ZHONGBEI UNIV