Semiconductor structure and production method thereof

Abstract

The invention discloses a semiconductor structure and a production method thereof. The production method comprises the steps of forming a nitrogen-containing compound layer on a substrate; carrying out a heat treatment process on the nitrogen-containing compound layer; and forming a photoresist pattern layer, wherein at least one part of nitrogen-containing compound layer is exposed out of the photoresist pattern layer. According to the production method, the heat treatment process is carried out on the nitrogen-containing compound layer before the photoresist pattern layer is formed, and theactivity of a nitrogen bond on the surface of the nitrogen-containing compound layer can be destroyed by the heat treatment process, so that the nitrogen bond does not react with air or a hydrogen bond in a cleaning process on the surface of the nitrogen-containing compound layer during the formation of the photoresist pattern layer, thereby preventing generation of residual gum. Therefore, CD ofthe semiconductor structure produced through the production method is stable and the semiconductor structure has good product quality and performance.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure and a manufacturing method thereof. Background technique [0002] In the field of semiconductor manufacturing, the photolithography process is an extremely critical step in the manufacturing method of semiconductor structures. Whether it can accurately move the corresponding pattern to the semiconductor substrate is one of the main factors that determine the performance and quality of semiconductor structures. Generally, the photolithography process includes several main steps such as glue coating, exposure, development and glue removal. Nowadays, with the development of continuous reduction in the size of semiconductor structures, the photolithography process will face more severe challenges, which have a key impact on the performance, quality and yield of semiconductor structures. [0003] However, in the photolithography process, photoresis...

AI Technical Summary

Problems solved by technology

[0003] However, in the photolithography process, photoresist residue often occurs, and the remaining photoresist will affect the critical dimension (CD) of the semiconductor structure.

For example: in the photolithography process of the Lightly Doped Drain (LDD) of the static random access memory unit (SRAMCell), there will be N-H bond reaction to form residual glue (Scum), in which the N bond comes from the polysilicon sidewall The silicon nitride sidewall, the H bond comes from the air or the cleaning process, and the residual glue will volatilize and decrease with time, causing the characteristic size (CD) of the LDD to be unstable, thus affecting the quality and performance of the SRAM

Images