Chain-bead-shaped silicon carbide nano material and preparation method and application thereof

A technology of nanomaterials and silicon carbide, applied in chemical instruments and methods, carbon compounds, inorganic chemistry, etc., to achieve the effects of short process cycle, improved mechanical properties, and low requirements for preparation conditions

Active Publication Date: 2021-04-16
CENT SOUTH UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the nanostructures synthesized by the above methods are mainly distributed on the surf

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chain-bead-shaped silicon carbide nano material and preparation method and application thereof
  • Chain-bead-shaped silicon carbide nano material and preparation method and application thereof
  • Chain-bead-shaped silicon carbide nano material and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0050] Example 1

[0051] The present embodiment provides a preparation method of a one-dimensional SiC nanomaterial with a chain bead hierarchical structure, and the preparation method is as follows:

[0052] S1. Configuration of the pre-spinning solution

[0053] S1-1. Solute configuration

[0054] (1) Carbon source: polyacrylonitrile (PAN): 4.1 wt% (mass percentage);

[0055] (2) Silicon source: Polycarbosilane (PCS): 9.8 wt% (mass percentage).

[0056] S1-2. Solvent configuration:

[0057] Pre-spinning solvent content (the remaining part of the total solution, the solvent here is the mixed solvent of solvent 1 and solvent 2, the percentage is the percentage of each solvent formula, not the percentage of the total solution)

[0058] The solvent content is divided into two parts:

[0059] (1) Solvent 1: N,N-Dimethylformamide (N,N-Dimethylformamide, DMF) is a carbon source solvent: 10wt% (mass percentage); xylene is a silicon source solvent: 90 wt% (mass percentage) ; ...

Example Embodiment

[0070] Example 2

[0071] Example 2 is basically the same as Example 1, except that the content of polyacrylonitrile is adjusted to 3%, and the content of polycarbosilane is adjusted to 12%, that is, the ratio of silicon source to carbon source is increased.

[0072] Among them, S1-2. Solvent configuration:

[0073] Pre-spinning solvent content (the remaining part of the total solution, the solvent here is the mixed solvent of solvent 1 and solvent 2, the percentage is the percentage of each solvent formula, not the percentage of the total solution)

[0074] The solvent content is divided into two parts:

[0075] (1) Solvent 1: N,N-Dimethylformamide (N,N-Dimethylformamide, DMF) is a carbon source solvent: 10wt% (mass percentage); xylene is a silicon source solvent: 90 wt% (mass percentage) ;

[0076] (2) Solvent 2: This solvent is a solubilizer, which is a mixed solvent of Tween 80 and high-purity ethanol, and the ratio of the two is 1:5;

[0077] The solvent 1 and solvent...

Example Embodiment

[0080] Example 3

[0081] Example 3 is basically the same as Example 1, except that the content of polyacrylonitrile is adjusted to 5.2%, and the content of polycarbosilane is adjusted to 8.3%, that is, the ratio of silicon source to carbon source is reduced. The final microscopic appearance of its products is as follows: Figure 5 As shown in the figure, it can be seen that the structure is also in the shape of a chain bead, but compared with Example 1, the connection between the chain beads is wider and thicker, and the phenomenon of agglomeration and agglomeration of the chain beads exists at the same time.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Login to view more

Abstract

The invention belongs to the field of silicon carbide nano materials, and particularly provides a chain-bead-shaped silicon carbide nano material and a preparation method and application thereof. A precursor solution is prepared by adopting a liquid phase method, then the solution is subjected to drawing and wire drawing under the action of electrostatic force through electrostatic spinning to obtain a one-dimensional SiC preform fiber membrane, and finally impurities are removed through heat treatment and crystallization is performed to obtain the large-scale continuous one-dimensional SiC nano material. The one-dimensional SiC nano material with the chain bead-shaped hierarchical structure prepared by the method is a high-quality raw material serving as a structural unit or a composite component. The electrical property of the material has huge application value in the aspects of energy storage and conversion, sensing, photoelectrons, field radiation and the like. The chain-bead-shaped hierarchical structure is expected to be used as a matrix reinforcement phase to improve the mechanical properties of the material.

Description

technical field [0001] The invention belongs to the field of silicon carbide nanomaterials, and more specifically relates to a chain bead-shaped silicon carbide nanomaterial, a preparation method and an application thereof. Background technique [0002] Among the existing technologies, nanomaterialization is the mainstream trend to obtain high-performance functional materials, especially for functional components of devices used in energy, medicine, environmental protection and other fields. As an emerging semiconductor material, SiC has various nanostructures showing different electromagnetic properties, and has achieved preliminary applications. The excellent properties of one-dimensional SiC nanomaterials, especially in terms of mechanical and electrical properties, are more advantageous than their micron materials and other nanostructures. Gas-phase method and liquid-phase method are effective means to prepare one-dimensional SiC nanomaterials, and one-dimensional nanos...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C01B32/977
Inventor 李杨庞亮肖鹏
Owner CENT SOUTH UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap