A method for growing rhenium disulfide nanosheets on a silicon substrate without an oxide layer

Abstract

The invention discloses a method for growing rhenium disulfide nanosheets on a silicon substrate without an oxide layer. The method includes the following steps: S1. Cleaning the silicon substrate and performing pretreatment; S2. In the multi-temperature zone tube furnace, there is an alumina boat in each of the two adjacent temperature zones; wherein, the two alumina boats The separation distance is 20-30cm. The sulfur source is placed in the center of the alumina boat in the upstream temperature zone, the rhenium source is placed on the downstream edge of the alumina boat in the downstream temperature zone, and the growth side of the silicon substrate faces downward. The distance from the downstream edge of the slit is 0 to 1 cm; S3. Then, an inert gas is introduced into the dual-temperature-zone tube furnace, heated for reaction, and rhenium disulfide nanosheets can be grown on the silicon substrate without an oxide layer. The present invention uses sublimated sulfur as the sulfur source and rhenium trioxide as the rhenium source, and uses the chemical vapor deposition method to adjust the distance between the sulfur source and the rhenium source, as well as the position of the rhenium source and the silicon substrate in the downstream temperature zone, to achieve an oxidation-free Rhenium disulfide nanosheets were directly grown on the silicon substrate of the layer.

Description

technical field [0001] The invention relates to the technical field of nanomaterial preparation, in particular to a method for growing rhenium disulfide nanosheets on a silicon substrate without an oxide layer. Background technique [0002] Two-dimensional transition metal chalcogenides (TMDs) have a graphene-like structure and have excellent electrical, optical, magnetic, and mechanical properties, and have become one of the hotspots in material science research today. Rhenium disulfide (ReS 2 ) is a "new star" in this family of materials in recent years, and most of the studied similar materials with high lattice symmetry (such as MoS 2 、WS 2 etc.) show isotropic difference, due to the presence of Paiworth distortion, ReS 2 The degree of asymmetry is higher in the structure, and it has a unique twisted 1T phase, so that it has anisotropy in electrical and optical properties. and ReS 2 Has a very weak interlayer coupling effect, so that no matter single-layer or multi-...

AI Technical Summary

Problems solved by technology

And currently, ReS 2 Nanosheets can only be synthesized on materials such as silica, mica, gold foil, graphene, etc. If the ReS synthesized on these substrates 2 Applications to silicon-based optoelectronic devices or catalytic hydrogen production need to be transferred to the target substrate by various means. There is no doubt that this process will cause damage to its morphology, structure, etc., and at the same time bring some unpleasant effects. necessary trouble

Therefore, ReS 2 Applications in these areas have been limited to a certain extent

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