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Substrate cleaning solution, preparation method thereof and integrated circuit substrate cleaning method

A technology of integrated circuit base and cleaning liquid, which is applied in the preparation of detergent mixture compositions, circuits, chemical instruments and methods, etc., can solve problems such as damage to integrated circuit substrates and poor cleaning effect, and achieve the effect of strengthening mutual dissolution.

Inactive Publication Date: 2018-10-23
北京蜃景光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the cleaning effect of the substrate cleaning solution in the prior art is not good, and it is easy to cause damage to the integrated circuit substrate

Method used

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Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0023] The preparation method of the substrate cleaning solution provided in this example is as follows: 5-8 parts of hydrofluoroalcohol, 5-8 parts of ethyl acetate and 5-8 parts of trichloroethylene are dissolved in 20-30 parts of supercritical carbon dioxide solvent to obtain the first a mixture;

[0024] Next, 10-12 parts of ethylene glycol monoethyl ether, 10-15 parts of N-methylpyrrolidone and 10-15 parts of sodium bicarbonate are dissolved in 30-40 parts of deionized water to obtain a second mixed solution;

[0025] The first mixture and the second mixture are mixed.

[0026] The preparation method is simple and easy to operate. By pre-preparing the first mixed solution and the second mixed solution, various components are fully dissolved, which is beneficial to the subsequent cleaning of the integrated circuit substrate, and the obtained substrate cleaning solution can greatly clean the substrate. good cleanliness.

[0027] In addition, an embodiment of the present in...

Embodiment 1

[0038] An embodiment of the present invention provides a method for cleaning an integrated circuit substrate, which includes the following steps:

[0039] S1. Obtain the first mixed solution by dissolving 6 parts of hydrofluoroalcohol, 6 parts of ethyl acetate and 6 parts of trichlorethylene in 25 parts of supercritical carbon dioxide solvent; then 11 parts of ethylene glycol monoethyl ether, N-methyl 13 parts of pyrrolidone and 12 parts of sodium bicarbonate were dissolved in 35 parts of deionized water to obtain a second mixed solution; the first mixed solution and the second mixed solution were mixed to prepare a substrate cleaning agent.

[0040] S2. Firstly, the substrate is soaked in the substrate cleaning solution for 25 minutes. When the substrate is immersed, the ambient pressure is 72.9 atm, and the temperature of the cleaning solution is 40°C.

[0041] S3. Then perform the first ultrasonic cleaning at a frequency of 60 KHz for 12 minutes. The substrate is subjected...

Embodiment 2

[0045] An embodiment of the present invention provides a method for cleaning an integrated circuit substrate, which includes the following steps:

[0046] S1. Obtain the first mixed liquid by dissolving 5 parts of hydrofluoroalcohol, 5 parts of ethyl acetate and 5 parts of trichlorethylene in 20 parts of supercritical carbon dioxide solvent; then 10 parts of ethylene glycol monoethyl ether, N-methyl 10 parts of pyrrolidone and 10 parts of sodium bicarbonate were dissolved in 30 parts of deionized water to obtain a second mixed solution; the first mixed solution and the second mixed solution were mixed to prepare a substrate cleaning agent.

[0047] S2. First, put the substrate in the substrate cleaning solution and soak for 20 minutes. When the substrate is soaking, the ambient pressure is 75atm, and the temperature of the cleaning solution is 35°C.

[0048] S3. Then perform the first ultrasonic cleaning at a frequency of 50 KHz for 15 minutes. The substrate is subjected to t...

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PUM

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Abstract

The invention relates to the field of production of integrated circuit substrates and provides a substrate cleaning solution, a preparation method thereof and an integrated circuit substrate cleaningmethod. The substrate cleaning solution comprises parts by weight: 20 to 30 parts of a supercritical carbon dioxide solvent, 5 to 8 parts of hydrofluoric alcohol, 5 to 8 parts of ethyl acetate, 5 to 8parts of trichloroethylene, 30 to 40 parts of deionized water, 10 to 12 parts of 2-ethoxyethanol, 10 to 15 parts of N-methyl pyrrolidone and 10 to 15 parts of sodium bicarbonate. The substrate cleaning solution has good cleaning effects on the integrated circuit substrate, and the substrate cleaning solution is easy to remove and does not damages to the integrated circuit substrate. The preparation method is simple, and the acquired substrate cleaning solution can well clean the substrate. Besides, in the integrated circuit substrate cleaning method, the substrate is placed in the above substrate cleaning solution for cleaning. The cleaning effects are good, and the performance of the integrated circuit substrate is good.

Description

technical field [0001] The invention relates to the production field of integrated circuit substrates, in particular to a substrate cleaning solution, a preparation method thereof and a cleaning method for integrated circuit substrates. Background technique [0002] Silicon wafer cleaning in the integrated circuit manufacturing process refers to the use of physical or chemical methods to remove pollutants and self-oxides on the surface of silicon wafers before oxidation, photolithography, epitaxy, diffusion, and lead evaporation to obtain cleanliness. process required for the silicon wafer surface. The importance of silicon wafer cleaning to the semiconductor industry has attracted great attention as early as the early 1950s, because the contamination on the surface of silicon wafers will seriously affect the performance, reliability and yield of devices. However, the substrate cleaning solution in the prior art has poor cleaning effect and easily causes damage to the integ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02C11D7/50C11D7/32C11D7/30C11D7/28C11D7/26C11D7/12C11D7/60
CPCH01L21/02057C11D7/12C11D7/263C11D7/266C11D7/28C11D7/30C11D7/3281C11D7/50C11D2111/22
Inventor 刘金章杨欣泽
Owner 北京蜃景光电科技有限公司