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Semiconductor device and formation method thereof

A semiconductor and device technology, applied in the field of semiconductor devices and their formation, can solve problems such as semiconductor device performance needs to be improved, and achieve the effect of improving current crowding and increasing area

Active Publication Date: 2018-10-23
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the performance of semiconductor devices composed of planar MOS transistors or fin field effect transistors needs to be improved.

Method used

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  • Semiconductor device and formation method thereof
  • Semiconductor device and formation method thereof
  • Semiconductor device and formation method thereof

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Experimental program
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Embodiment Construction

[0035] Figure 1 to Figure 2 It is a structural schematic diagram of the formation process of a semiconductor device.

[0036] refer to figure 1 , providing a substrate 100 having a gate structure 110 thereon; and forming source and drain doped regions 120 in the substrate 100 on both sides of the gate structure 110 .

[0037] refer to figure 2 Doping contact ions on the top surface of the source-drain doped region 120 to form a contact doped region 130 in the top region of the source-drain doped region 120 .

[0038] However, the performance of the above-mentioned semiconductor devices is poor, and it is found through research that the reasons are:

[0039] The effect of doping the top surface of the source-drain doped region 120 with contact ions includes: the total concentration of source-drain ions and contact ions in the top region in the source-drain doped region 120 is greater than that of the source-drain ions in the source-drain doped region 120 concentration of ...

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Abstract

The invention relates to a semiconductor device and a formation method thereof. The method includes the following steps that: a substrate is provided, and the substrate is provided with gate structures; source / drain doping regions located at two sides of each gate structure are formed in the substrate, source and drain ions exist in the source / drain doping regions, and the top surfaces of the source / drain doping regions are recessed; the top surfaces of the source / drain doping regions are doped with contact ions, so that contact doped regions can be formed at the top regions of the source / drain doping regions, and the conductivity type of the contact ions is the same as the conductivity type of the source and drain ions. With the method adopted, the electrical performance of the semiconductor device can be improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] MOS transistors are one of the most important components in modern integrated circuits. The basic structure of a MOS transistor includes: a semiconductor substrate; a gate structure located on the surface of the semiconductor substrate, a source region located in the semiconductor substrate on one side of the gate structure, and a drain region located in the semiconductor substrate on the other side of the gate structure. The working principle of the MOS transistor is: by applying a voltage to the gate structure, the current through the channel at the bottom of the gate structure is adjusted to generate a switching signal. [0003] With the development of semiconductor technology, the ability of the traditional planar MOS transistor to control the channel current becomes weaker, resultin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/78H01L29/417
CPCH01L29/41725H01L29/41791H01L29/66795H01L29/785H01L29/6681H01L21/26513H01L29/0847H01L29/41766H01L21/3065H01L29/417
Inventor 李勇
Owner SEMICON MFG INT (SHANGHAI) CORP
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