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Organic light-emitting diode with performance optimised by plasmon suppression

A light-emitting diode, plasma technology, applied in the direction of organic semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problems of not completely eliminating losses and reducing the quality of organic laminates

Inactive Publication Date: 2018-11-02
原子能和辅助替代能源委员会
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] This method can extract some of the energy of the plasmon, but it cannot completely eliminate the losses associated with it
Furthermore, for top-emitting diodes (WO 2014 / 191733), building the top electrode risks reducing the quality of the organic stack

Method used

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  • Organic light-emitting diode with performance optimised by plasmon suppression
  • Organic light-emitting diode with performance optimised by plasmon suppression
  • Organic light-emitting diode with performance optimised by plasmon suppression

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] figure 1 The OLEDs (which are not drawn to scale) include from the bottom:

[0032] - The substrate SUB, which can be made of silicon or glass, for example.

[0033] - The bottom electrode EL1, made of AlCu alloy, is deposited (eg by physical vapor deposition - PVD) on top of the surface of the substrate. The electrodes are opaque and can be relatively thick (hundreds of nanometers, even microns).

[0034] - A buffer layer CT made of TiN with a thickness of about 10 nanometers, deposited for example by PVD, PECVD (Plasma Enhanced Chemical Vapor Deposition) or ALD (Atomic Layer Deposition).

[0035] - Organic stack EO, 100 nm thick, obtained for example by PVD or liquid phase deposition. In the center of the stack there is a light-emitting layer which exhibits an emission centered at a wavelength of 550 nanometers. The figure does not show this layer, but only the point emitter (one point of this layer) EP used in the calculations that allow optimization of the effic...

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Abstract

An organic light-emitting diode comprises a first electrode (EL1), a stack (eo) of semiconducting organic layers, comprising at least one light-emitting organic layer, deposited on top of the first electrode and a second electrode (EL2) deposited on a surface of the stack opposite the first electrode, wherein the first electrode comprises at least one region (CP) in electrical contact with the stack of semiconducting organic layers surrounded by one or more regions (MB) electrically insulated from the stack, each electrically insulated region structured to form at least one Bragg mirror adapted to reflect plasmons (PL) with a wavelength lambda of emission from the light-emitting layer and guided by an interface between the first electrode and the stack of semiconducting organic layers, each region in electrical contact with the stack forming, with the Bragg mirror or mirrors surrounding it, a cavity not supporting any resonant plasmon mode at the wavelength lambda.

Description

technical field [0001] The present invention relates to an organic light emitting diode (OLED), more particularly to a top emission type organic light emitting diode. Such diodes can be used in particular for displays (OLED screens), but are also suitable for other applications such as lighting. Background technique [0002] OLEDs consist of a stack of semiconducting organic layers, including at least one emissive layer, between two electrodes, usually metallic. The organic stack consists of at least one hole-transport layer, an emissive layer (emission) and an electron-transport layer. The thickness of the organic region is usually set to about 100 nanometers to form a half-wave Fabry-Perot cavity for visible light (the optical index of the organic layer is usually about 1.7. A potential difference is applied between the electrodes in the organic stack, which recombine radiatively in the emissive layer. [0003] The emitter, which has a relatively short electrode distanc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/52
CPCH10K50/11H10K50/852H10K50/82H10K50/818H10K50/858H10K2102/3026H10K10/26H10K50/85H10K50/813H10K50/856
Inventor S·布塔米S·盖廷T·曼德隆B·拉辛
Owner 原子能和辅助替代能源委员会