Supercharge Your Innovation With Domain-Expert AI Agents!

Disilane preparation device

A preparation device and disilane technology, applied in the direction of silicon hydride, etc., can solve the problems of limitations, difficult synthesis, low yield, etc.

Pending Publication Date: 2018-11-06
CHINA SILICON CORP LTD +1
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the chlorodisilane reduction method is to prepare disilane by reducing chlorodisilane with complex metal hydrides such as lithium aluminum hydride or sodium aluminum hydride, but in this method, chlorodisilane needs to be synthesized separately, which is difficult to synthesize and low yield
[0005] The magnesium silicide and ammonium chloride reaction method is to react magnesium silicide and ammonium chloride to produce disilane, but the product in the process is mainly silane, and the proportion of disilane is only about 3%, which is recovered as a by-product, so the main Increasing disilane yield by controlling the yield of by-products limits the feasibility of the process to produce disilane as the main product

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Disilane preparation device
  • Disilane preparation device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] Typical embodiments that embody the features and advantages of the present invention will be described in detail in the following description. It should be understood that the present invention is capable of various changes in different embodiments without departing from the scope of the present invention, and that the description and illustrations therein are illustrative in nature and not limiting. this invention.

[0020] In the production process of modified Siemens polysilicon, a small amount of chlorodisilane will be produced in the reduction process and hydrogenation process. Chlorodisilane is monochlorodisilane, dichlorodisilane, trichlorodisilane, tetrachlorodisilane, pentachlorodisilane A mixture of disilane and hexachlorodisilane, after concentration, the above-mentioned chlorodisilane is enriched in the polysilicon raffinate.

[0021] One embodiment of the present invention provides a disilane preparation device, which can be used to recover and refine chlo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The embodiment of the invention provides a disilane preparation device which comprises a filtering unit, a first rectifying tower, a second rectifying tower and a reactor, wherein the first rectifyingtower is connected with the filtering unit, the second rectifying tower is connected with the first rectifying tower, and the reactor is connected with the second rectifying tower. According to the device disclosed by the embodiment of the invention, polycrystalline silicon residual liquid is utilized as a raw material, and high-purity disilane meeting semiconductor industry application can be prepared out.

Description

technical field [0001] The invention relates to a disilane preparation device, in particular to a preparation device capable of preparing high-purity disilane that meets the application requirements of the semiconductor industry. Background technique [0002] Disilane is mainly used in solar cells, photosensitive drums, amorphous silicon films, epitaxial growth, chemical vapor deposition, etc. When used as a deposition source, the deposition layer is silicon oxide or silicon nitride. Compared with silane, disilane has the characteristics of faster deposition rate and lower deposition temperature, which can prevent the formation of spherical protrusions in amorphous silicon and can improve the deposition rate. The uniformity is mainly used in the manufacture of high-end chips below 20 nanometers. [0003] In the production of solar cells, the deposition rate of disilane is much faster than that of silane on amorphous silicon wafers, and the temperature can be lowered by 200-...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B33/04
CPCC01B33/04
Inventor 万烨刘见华严大洲赵雄郭树虎赵宇
Owner CHINA SILICON CORP LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More