Unlock instant, AI-driven research and patent intelligence for your innovation.

Depositing nickel layer removing solution and nickel layer removing method for low-temperature chemical nickel bath body

A low-temperature chemical, nickel tank technology, applied in the field of printed circuits, can solve problems such as harming the health of operators and polluting the environment, and achieve the effects of improving production efficiency, fast nickel removal, and saving maintenance time.

Inactive Publication Date: 2018-11-06
XIAN MICROELECTRONICS TECH INST
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the method for removing the nickel layer deposited in the low-temperature chemical nickel bath generally adopts the nitric acid with a concentration of 30% to 40%. This method removes the nickel faster, but the removal process will generate toxic yellow-brown NO 2 (Nitrogen dioxide) gas, pollutes the environment, and harms the health of operators. Additional ventilation devices or nitric acid inhibitors must be equipped for removal.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] The present invention will be described in detail below in conjunction with specific embodiments.

[0018] Add sulfuric acid-hydrogen peroxide-diethylenetriamine (DETA) aqueous solution into the nickel plating tank, the composition of sulfuric acid-hydrogen peroxide-diethylenetriamine (DETA) aqueous solution is: the volume ratio is 3%~6% sulfuric acid, the volume ratio is 5% %~15% hydrogen peroxide, 5g / L~10g / L diethylenetriamine (DETA) and water.

[0019] The nickel stripping method is carried out according to the following conditions:

[0020] (a) Temperature, the working temperature of nickel stripping is 50-70°C.

[0021] (b) Add metered water, sulfuric acid, hydrogen peroxide and diethylenetriamine (DETA) successively according to the volume ratio in the nickel plating tank; wherein the solution component is 3%~6% sulfuric acid by volume ratio, and the volume ratio is 5% %~15% hydrogen peroxide, 5g / L~10g / L diethylenetriamine (DETA), and the rest is water.

[0022...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a depositing nickel layer removing solution and a nickel layer removing method for a low-temperature chemical nickel bath body. Sulfuric acid, DETA and hydrogen peroxide are dissolved in water, reaction occurs, and according to the total volume of sulfuric acid, diethylenetriamine, the hydrogen peroxide and water, the volume fraction of the sulfuric acid is 3%-6%, the volume fraction of the hydrogen peroxide is 5%-15%, the mass concentration of the DETA is 5 g / L-10 g / L, and the balance is water; the sulfuric acid, the diethylenetriamine and the hydrogen peroxide are commonly used agents in the industry. By adopting the depositing nickel layer removing solution and the nickel layer removing method, the normal-state nickel removing speed of a deplating solution is 240microns / min to 320 microns / min. The rapid removal of a depositing nickel plating layer in low-temperature chemical nickel baths and the like is achieved, and the depositing nickel layer removing solution and the nickel layer removing method are suitable for bath body maintenance during low-temperature small-scale batch chemical nickel production.

Description

technical field [0001] The invention belongs to the field of printed circuits, and in particular relates to a method for depositing a nickel layer stripping solution and a nickel stripping layer on a low-temperature chemical nickel tank. Background technique [0002] Low-temperature electroless nickel plating is widely used in electronic devices such as military three-dimensional packaging modules to achieve interlayer interconnection between module chips. However, there is a self-reaction in low-temperature electroless nickel plating at room temperature, and a thicker nickel layer is gradually deposited in the electroless nickel plating tank, thereby increasing the floating fine nickel particles in the solution. In severe cases, nodules will be formed on the surface of the module after electroless nickel plating , affecting the reliability of the product, resulting in rework or degradation of the product. Therefore, it is necessary to remove the nickel layer deposited in t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23F1/44
CPCC23F1/44
Inventor 雷雨辰单丙辉高原
Owner XIAN MICROELECTRONICS TECH INST