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A method for preparing twin-oriented polysilicon ingots by setting σ3 twin boundaries

A polycrystalline silicon ingot furnace and polycrystalline silicon technology are applied in the growth of polycrystalline materials, chemical instruments and methods, single crystal growth, etc., and can solve the problems of affecting the quality of materials, high impurity content of polycrystalline silicon wafers, restricting the conversion efficiency of solar cells, etc. Improve the quality, the method is simple and easy to implement, and the effect of avoiding dislocation defects

Active Publication Date: 2020-04-14
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the disadvantages of polysilicon wafers are also obvious. First, because the crucible and silicon nitride coating are in direct contact with molten silicon liquid, the impurity content in polysilicon wafers will be relatively high; Structural defects such as boundaries and dislocations, these defects will interact with impurity elements to form carrier recombination centers, which seriously affect the quality of materials and restrict the conversion efficiency of solar cells; , the textured surface can only be prepared by the acid textured process, which also affects the conversion efficiency of solar cells

Method used

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  • A method for preparing twin-oriented polysilicon ingots by setting σ3 twin boundaries
  • A method for preparing twin-oriented polysilicon ingots by setting σ3 twin boundaries
  • A method for preparing twin-oriented polysilicon ingots by setting σ3 twin boundaries

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Embodiment 1

[0030] (1) Cut along the standard {100} crystal plane marked by the four ridges in the Czochralski monocrystalline silicon rod in the crystal direction. The cutting method is as follows figure 1 As shown, the obtained size is 156×156×30mm 3 The single crystal seed crystal I with 6 faces of {100} crystal face family; cut from the standard crystal cube to obtain the same shape as single crystal seed crystal I and 6 faces of {221} Single crystal seed crystal II of the crystal face family, the cutting method is as follows figure 2 shown;

[0031] (2) Select single crystal seed crystal I and single crystal seed crystal II with no edge chipping and flat tangent surface, cut out a 54.7° included angle at the horizontal splicing place, and cut out a horizontal inclination angle of 45° at the vertical splicing place, and the inclination angle to The crystal is inclined towards the seed crystal. After cutting, the single crystal seed crystal III and the single crystal seed crystal...

Embodiment 2

[0039] (1) Cut along the standard {100} crystal plane calibrated by the four ridges in the crystalline silicon rod and rotate it counterclockwise by 45° to obtain a size of 156×156×30mm 3 And the single crystal seed crystal I whose 4 planes belong to {110} crystal plane family and 2 planes belong to {100} crystal plane family, its growth plane is {110} crystal plane, and the cutting method is as follows: Figure 4 shown;

[0040] Cut from the standard oriented single crystal cube to get 6 single crystal cubes with {221} crystal face family, the cutting method is as follows figure 2 As shown, the [221] crystal direction is then rotated 45° counterclockwise with the [1-22] crystal direction as the axis and cut perpendicular to the (1-22) crystal plane. The cutting method is as follows Figure 5 As shown, the single crystal seed II with the same shape as the single crystal seed I was obtained, and its growth plane was the crystal orientation rotated by 45°, and the crystal o...

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Abstract

The invention discloses a method for preparing a polycrystalline silicon cast ingot, which comprises the following steps: cutting monocrystal seed crystal with two different crystal orientations, performing adjacent spacing and tight splicing on monocrystal seed crystal obtained by cutting to form a seed crystal layer, and laying the seed crystal layer on the bottom of a crucible; then placing a silicon material on the seed crystal layer and heating to control crucible temperature, so that the silicon material is fully molten; when the seed crystal layer is partially molten, inducing the partially molten seed crystal layer to grow, so that sigma3 twin boundaries are formed at a seed crystal splicing place, and finally the polycrystalline silicon cast ingot with dual crystal orientations isobtained through directional solidification. The method avoids dislocation caused by crystal orientation difference formed by seed crystal placement by manually setting the sigma3 twin boundaries atthe seed crystal splicing place, and dislocation density at the upper part of regular dual crystal orientation polycrystalline silicon cast ingot is lower than 10<4> / cm<2>, and the quality of polycrystalline silicon cast ingot is effectively improved.

Description

technical field [0001] The invention relates to the field of polysilicon manufacture, in particular to a method for preparing a bicrystalline polysilicon ingot by setting a Σ3 twin boundary. Background technique [0002] As the most abundant clean energy in nature, solar energy is considered to be one of the most ideal renewable new energy sources in the world. At present, the world mainly utilizes solar energy through photovoltaic power generation. In the current photovoltaic market, solar cell modules are mainly based on crystalline silicon materials, which account for more than 90% of the market share. Crystalline silicon materials include monocrystalline silicon wafers and polycrystalline silicon wafers. [0003] Monocrystalline silicon wafers are obtained by slicing cylindrical monocrystalline silicon rods grown by the Czochralski method. The necking process makes Czochralski monocrystalline silicon have dislocation-free characteristics, so there are fewer defects and l...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B28/06C30B29/06
CPCC30B28/06C30B29/06
Inventor 余学功张放杨德仁
Owner ZHEJIANG UNIV
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