Flexible ion sensor based on tungsten diselenide

An ion sensor, tungsten diselenide technology, applied in the field of MEMS, can solve the problems of inability to distinguish measured ions, device performance drift, poor selectivity of tungsten diselenide, etc.

Pending Publication Date: 2018-11-20
TSINGHUA UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, there is no relevant report on tungsten diselenide ion sensor
[0003] The main problems of tungsten diselenide as a sensitive material: 1. The upper surface of tungsten diselenide is exposed to the air for a long time. Oxygen, water vapor, etc. will gradually degrade

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  • Flexible ion sensor based on tungsten diselenide
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  • Flexible ion sensor based on tungsten diselenide

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Embodiment Construction

[0025] The technical solutions of the present invention will be further described below in conjunction with the embodiments.

[0026] refer to figure 1 , figure 2 , a flexible ion sensor based on tungsten diselenide, characterized in that, from top to bottom, the sensor is ion carrier 1-1, boron nitride layer 1-2, metal electrode 1-3, tungsten diselenide Layer 1-4, flexible substrate 1-5, both ends of the tungsten diselenide layer 1-4 are connected to metal electrodes 1-3.

[0027] The ionophore 1-1 has a thickness of 20-200 microns.

[0028] The boron nitride layer 1-2 is a single layer or multiple layers, generally 1-10 layers, and when the thickness of the boron nitride material is reduced to 10 layers or less, it becomes a two-dimensional material, and its material properties are completely different from those of the block Bulk boron nitride material. The material of the metal electrodes 1-3 is selected from any one of Au, Ag, Cu, Al and Pt, and the thickness is 20-2...

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Abstract

The invention discloses a flexible ion sensor based on tungsten diselenide and belongs to the technical field of MEMS (Micro-electromechanical Systems). The flexible ion sensor is characterized in that sensor array is made of tungsten diselenide as a sensitive material; the sensor structurally comprises an ion carrier, a boron nitride layer, a tungsten diselenide layer and a flexible substrate, wherein both ends of the tungsten diselenide layer are connected with a metal electrode; the ion carrier has a thickness of 20-200 micrometers; the boron nitride layer is a single layer or consists of multiple layers; the metal electrode is made of a material of any one of Au, Ag, Cu, Al and Pt and has a thickness of 20-200 nanometers; the tungsten diselenide layer is a single layer or consists of multiple layers; the upper surface of the tungsten diselenide layer is completely covered by the ion carrier and the boron nitride layer. As the tungsten diselenide is adopted as the sensitive material, the boron nitride is adopted as a protection layer and the ion carrier is adopted as a selecting layer, the sensitivity, the stability and the selectivity of the flexible ion sensor can be improved,the sensor has excellent bending resistance and is easy to process.

Description

technical field [0001] The invention relates to the technical field of MEMS, in particular to a flexible ion sensor based on tungsten diselenide. Background technique [0002] The two-dimensional material tungsten diselenide has a large specific surface area, extremely low noise, and a non-zero band gap. These characteristics determine that the sensor based on tungsten diselenide has extremely high sensitivity and extremely low detection limit; two Tungsten selenide can be prepared in a large area by chemical vapor deposition, which is easy to process and has the potential for integration; tungsten diselenide has high fracture strain and excellent bending resistance, and wearable flexible devices often need to produce larger deformation, so tungsten diselenide is an ideal choice as a sensitive material for flexible sensors. At present, there is no relevant report on tungsten diselenide ion sensor. [0003] The main problems of tungsten diselenide as a sensitive material: 1...

Claims

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Application Information

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IPC IPC(8): G01N27/414
CPCG01N27/4146
Inventor 李鹏
Owner TSINGHUA UNIV
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