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A kind of complementary resistive memory and its preparation method

A resistive variable memory, complementary technology, applied in the direction of electrical components, etc., can solve the problems of unfavorable large-scale commercial application, increase device complexity and cost, etc., achieve simple composition and crystal structure, increase storage density, and operate at low voltage Effect

Inactive Publication Date: 2020-08-11
SOUTH CHINA NORMAL UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] For the crosstalk problem in the criss-cross array, the traditional solution is to connect the resistive variable memory with selection units such as transistors, diodes, triodes, threshold switches and other gating devices, which effectively solves the crosstalk problem in the structure of the criss-cross array, but this undoubtedly increases Increased the complexity and cost of device fabrication, which is not conducive to large-scale commercial applications

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  • A kind of complementary resistive memory and its preparation method
  • A kind of complementary resistive memory and its preparation method
  • A kind of complementary resistive memory and its preparation method

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Embodiment Construction

[0032] Below knot and accompanying drawing and specific embodiment, the present invention is further elaborated, but the present invention is not limited to following embodiment, described method is conventional method if no special instructions, and described raw material all can be from open commercial channel if no special instructions And get.

[0033] like figure 1 As shown, the complementary resistive variable memory of this embodiment includes an ITO electrode 5 as a bottom electrode, a first amorphous Al 2 o 3 Thin film dielectric layer 4, graphene film 3, second amorphous Al 2 o 3 Thin film dielectric layer 2 and Au electrode 1.

[0034] The bottom electrode can also be Au, Pd, Ag, Cu, Pt, ITO, AZO or FTO, preferably ITO, AZO or FTO. The top electrode can be Au, Al, Ag or Pt, preferably Au.

[0035] The thickness of the bottom electrode is 300-350nm, the first amorphous Al 2 o 3 The thickness of the thin-film dielectric layer 4 is 5-30 nm, preferably 10 nm. T...

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Abstract

The invention discloses a complementary resistive variable memory and a preparation method thereof. The complementary resistive variable memory includes a bottom electrode, a composite layer with resistive variable function and a top electrode. The resistive switching function composite layer includes an inorganic metal oxide medium layer and a hexagonal honeycomb lattice graphene (Graphene) material film arranged between the inorganic metal oxide medium layers. The complementary resistive variable memory solves the problem of crosstalk in the cross-array structure of the resistive variable memory. The device has the advantages of simple structure, low operating voltage, fast response speed, etc., and can be used to develop a nanoscale non-volatile complementary resistive variable memory with high integration density and low energy consumption.

Description

technical field [0001] The invention relates to the field of semiconductor storage, in particular to a complementary resistive variable memory and a preparation method thereof. Background technique [0002] Memory based on semiconductor technology has gradually become the backbone of the storage field and is widely used in high-tech industries such as big data, cloud computing, and computers. As people's demand for large-capacity, high-performance, removable, and portable storage gradually increases, traditional magnetic random dynamic memory and flash memory can no longer meet the storage requirements of high density and miniaturization due to their own physical size limitations. Memory has great meaning and value. Resistive random access memory (RRAM, resistance random access memory) is regarded as one of the most promising memories among many new memory devices. Compared with traditional memories, RRAMs have great advantages in terms of scaling, power consumption, capac...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/8833H10N70/8845H10N70/023H10N70/011
Inventor 陈心满蒋治国张晓楠章勇
Owner SOUTH CHINA NORMAL UNIVERSITY
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