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Preparation method of inp-based alloy quantum dot, quantum dot, device and composition

A technology of quantum dots and base alloys, applied in the field of quantum dots, can solve problems such as low quantum efficiency, wide half-width of quantum dots, and weak stability, and achieve high quantum efficiency, improved size uniformity, and strong stability.

Active Publication Date: 2021-06-25
NANJING TECH CORP LTD
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The main purpose of this application is to provide a method for preparing InP-based alloy quantum dots, quantum dots, devices and compositions, so as to solve the problems of quantum dots in the prior art such as half-width, low quantum efficiency, and weak stability.

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  • Preparation method of inp-based alloy quantum dot, quantum dot, device and composition
  • Preparation method of inp-based alloy quantum dot, quantum dot, device and composition
  • Preparation method of inp-based alloy quantum dot, quantum dot, device and composition

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preparation example Construction

[0031] As introduced in the background art, InP quantum dots synthesized from InP-based alloy quantum dots in the prior art have wide half-maximum width, low luminous efficiency, poor coating effect and weak stability. The inventor of the present application studies the above-mentioned problems, and proposes a method for preparing InP-based alloy quantum dots. The method for preparing InP-based alloy quantum dots includes the following steps, 1) combining M precursors with phosphorus precursors, which can be The mixture of the selected first ligand and the first solvent is reacted at the first temperature to form the M-P complex solution; 2) the M-P complex solution is mixed with the indium precursor, the optional second ligand, and the second solvent React at the second temperature to obtain a solution containing InMP alloy quantum dots. Wherein, the InMP alloy quantum dots are InP-based alloy quantum dots. In the synthesis process of the InP-based alloy quantum dots, the M-...

Embodiment 1

[0047] The preparation method of InP-based alloy quantum dots provided in this embodiment takes InAlP / ZnSeS quantum dots as an example, and the preparation method includes the following steps:

[0048] 1) Add 0.1mmol Al(MA) 3 (Aluminum myristate) and 0.1mmol TMS-P (three (trimethylsilyl) phosphine), the mixture of 0.1mmol trioctylamine, 3.0g octadecene joins in the 25mL three-necked flask, and this three-necked flask is placed in N 2 Heated to 80°C under the exhaust state, reacted at the reaction temperature of 80°C, kept for 30 minutes and then lowered to room temperature to form an Al-P composite solution;

[0049] 2) Add 0.3mmol In(Ac) 3 (indium acetate), 0.9mmol myristic acid, the mixture of 10.0g octadecene joins in the 100mL three-necked flask, under N 2 Heated to 180°C under the exhaust state, kept it for 30 minutes and then lowered to 300°C. Inject the Al-P composite solution obtained in step 1), react at a reaction temperature of 300° C., and keep for 5 minutes to...

Embodiment 2

[0052] The difference between this example and Example 1 is that zirconium myristate is used instead of aluminum myristate.

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Abstract

The application provides a preparation method of InP-based alloy quantum dots, quantum dots, devices and compositions, the preparation method of the InP-based alloy quantum dots includes: 1) M precursor and phosphorus precursor, an optional first The mixture of the ligand and the first solvent reacts at a first temperature to form an M-P complex solution; 2) mixing the M-P complex solution with an indium precursor, an optional second ligand, and a second solvent React at the second temperature to obtain a solution containing InMP alloy quantum dots. The present application also provides an InP-based alloy quantum dot, a device and a quantum dot composition prepared by the above-mentioned preparation method of the InP-based alloy quantum dot. The quantum dots prepared by the method have the characteristics of narrower luminous half-peak width, higher quantum efficiency, better coating effect and stronger stability.

Description

technical field [0001] The present application relates to the field of quantum dots, in particular, to a method for preparing InP-based alloy quantum dots, quantum dots, devices and compositions. Background technique [0002] In recent years, due to the characteristics of high luminous efficiency, wide excitation range, narrow emission spectrum, and adjustable color wavelength, quantum dot materials have attracted more and more attention in the application of biotechnology, solar cells, and light-emitting diodes. At present, quantum dot TVs using the photoluminescence principle of quantum dots, such as TCL quantum dot TVs, have successfully entered the consumer market, with NTSC color gamut > 110%, and color performance comparable to OLED TVs, and have achieved good market feedback. As the second-generation light-emitting technology of quantum dot materials, quantum dot electroluminescence QLED has become a research hotspot in recent years. [0003] Quantum dot materials...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/88B82Y20/00B82Y40/00
CPCB82Y20/00B82Y40/00C09K11/883
Inventor 乔培胜高静谢阳腊余文华汪均苏叶华
Owner NANJING TECH CORP LTD
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