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Macroscopic ordered body of silicon carbide nanowires and preparation method thereof

A silicon carbide nanowire and macroscopic technology, applied in the field of nanomaterials, can solve the problem of less directional arrangement of silicon carbide nanowires, and achieve the effects of improving anisotropy, improving thermal performance, and three-dimensional scale control

Inactive Publication Date: 2018-11-30
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are relatively few studies on the directional arrangement of silicon carbide nanowires.

Method used

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  • Macroscopic ordered body of silicon carbide nanowires and preparation method thereof
  • Macroscopic ordered body of silicon carbide nanowires and preparation method thereof
  • Macroscopic ordered body of silicon carbide nanowires and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] A method for directional arrangement of silicon carbide nanowires, the specific steps are:

[0039] (1) Using sodium dodecylsulfonate as a dispersant, controlling the mass ratio of silicon carbide nanowires to sodium dodecylsulfonate to 5:1, and the mass ratio of silicon carbide nanowires to acetone to 1:10, using ultrasonic technology Uniformly disperse the silicon carbide nanowires in acetone to obtain a disordered silicon carbide nanowire suspension, the ultrasonic power is 300W, and the ultrasonic time is 1h;

[0040] (2) Using polymethyl methacrylate as a binder and dibutyl phthalate as a plasticizer, adding a suspension of disordered silicon carbide nanowires to obtain a silicon carbide nanowire slurry. The mass ratio of polymethyl methacrylate to dibutyl phthalate is 1:1, the mass ratio of silicon carbide nanowires to binder is 5:1, the ultrasonic power is 300W, and the time is 1h;

[0041] (3) Transfer the disordered silicon carbide nanowire slurry to a casting...

Embodiment 2

[0044] The difference between this embodiment and Example 1 is that in the (2) step of the preparation step, the ratio of the silicon carbide nanowires to the binder is controlled to be 1:1 to obtain a silicon carbide nanowire film with a higher volume content, Scanning microscope photographs such as image 3 shown.

Embodiment 3

[0046] The difference between this embodiment and embodiment 1 is: in the step (4) of the preparation step, the stretching percentage is controlled to be 80%. All the other components and preparation steps are the same as in Example 1. SiC nanowires with a greater degree of order were obtained, and the scanning microscope photos were as follows Figure 4 shown.

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Abstract

The present invention relates to a macroscopic ordered body of silicon carbide nanowires and a preparation method thereof. The preparation method of the macroscopic ordered body of the silicon carbidenanowires comprises the following steps: silicon carbide nanowires are dispersed in a solvent; then a dispersant, a binder and a plasticizer are added; the materials are mixed to obtain a silicon carbide nanowire slurry material; a tape casting method is used to prepare the silicon carbide nanowire slurry material into a disordered silicon carbide nanowire thin film; and the disordered silicon carbide nanowire thin film is treated by a mechanical stretching method to obtain the macroscopic ordered body of the silicon carbide nanowires.

Description

technical field [0001] The invention relates to a silicon carbide nanowire macro-ordered body and a preparation method thereof, belonging to the field of nanometer materials. Background technique [0002] Since the discovery of carbon nanotubes in 1991, the preparation and application of one-dimensional nanomaterials have attracted widespread attention. One-dimensional nanomaterials have excellent properties in electricity, heat, and magnetism, and are expected to become nano-reinforced phases of composite materials and realize functionalization of structural materials. Among them, silicon carbide nanowires have attracted much attention. Its strength, modulus and thermal properties are superior to silicon carbide whiskers and bulk materials. As a reinforcing phase, it is expected to improve the mechanical properties of composite materials and enhance thermal conductivity. [0003] However, the actual reinforcement effect of SiC nanowires in composite materials is not ideal,...

Claims

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Application Information

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IPC IPC(8): C01B32/956B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00C01P2004/03C01B32/956
Inventor 杨金山闫静怡董绍明周海军胡建宝
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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