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Hydride vapor phase epitaxy (HVPE) device capable of producing gallium nitride in batches

A mass production, gallium nitride technology, applied in crystal growth, single crystal growth, single crystal growth and other directions, can solve the problems of low efficiency of gallium nitride production equipment and low product qualification rate

Active Publication Date: 2018-11-30
北京镓数智能科技有限公司
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Problems solved by technology

[0005] The purpose of the present invention is to provide a kind of HVPE equipment that can produce gallium nitride in batches, so as to solve the problems of low efficiency and low product qualification rate of gallium nitride production equipment in the prior art

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  • Hydride vapor phase epitaxy (HVPE) device capable of producing gallium nitride in batches
  • Hydride vapor phase epitaxy (HVPE) device capable of producing gallium nitride in batches
  • Hydride vapor phase epitaxy (HVPE) device capable of producing gallium nitride in batches

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Embodiment Construction

[0031] The technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0032] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, ...

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Abstract

The invention relates to the technical field of semiconductor materials, and particularly discloses a hydride vapor phase epitaxy (HVPE) device capable of producing gallium nitride in batches. The device comprises a gas source chamber and a growth chamber; two gas inflow channels are arranged in the gas source chamber; one end of each of the two gas inflow channels communicates with the upper partof the gas source chamber, so that gases enter the growth chamber from the gas source chamber and are mixed in the growth chamber; a main support plate and a plurality of auxiliary support plates arranged on the main support plate are arranged in the middle of the growth chamber; and the auxiliary support plates are used for containing substrates. In the device, the gas inflow channels are transversely arranged, and the plate surface of the main support plate is horizontally placed, so that gases transversely enter the growth chamber and vertically contact the substrates, and then gallium nitride grows. According to the invention, the transverse gas source chamber and the vertical growth chamber are respectively arranged, gas inflow of resource gases and growth of gallium nitride crystalsare separated, so that the problems of insufficient auxiliary support plates and insufficient resource gases are solved, and therefore large-scale production of the gallium nitride crystals is realized.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to an HVPE device capable of batch-producing gallium nitride. Background technique [0002] GaN (related compounds containing gallium nitride: aluminum nitride, indium nitride, gallium aluminum nitride, gallium indium nitride, etc.) is the third-generation semiconductor material after silicon and gallium arsenide, and is the ideal source for making blue light—ultraviolet light waves Excellent materials for light-emitting devices (light-emitting diodes and laser diodes), detectors, and high-temperature, high-frequency, and high-power electronic devices. Gallium nitride semiconductors are 100-1000 times more efficient than silicon semiconductors. Furthermore, this dislocation density is 5*10 6 / cm 2 The gallium nitride LED material can produce LEDs that are twice as efficient as conventional LEDs. [0003] Currently, the chloride vapor phase epitaxy (Hydride Vapor ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/08C30B25/12C30B25/14C30B29/40C23C16/30C23C16/455C23C16/458
CPCC23C16/303C23C16/455C23C16/4581C30B25/08C30B25/12C30B25/14C30B29/406
Inventor 金英鎬金相模金奉辰宋国峰
Owner 北京镓数智能科技有限公司
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