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Substrate structure of semiconductor diode chip and production process thereof

A production process and diode technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of reducing the service life of the substrate, poor heat transmission, uneven packaging effect, etc. the effect of increasing

Inactive Publication Date: 2018-11-30
北京敬一科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The traditional front-mounted structure LED technology is slowly being eliminated, replaced by the flip-chip LED technology with better reliability and higher lumen density. At the same time, most of the existing semiconductor diode chips are packaged with epoxy resin. , the semiconductor diode chip is solidified by silica gel dispensing, and the sedimentation of the phosphor powder produced during the dispensing of silica gel makes the packaging effect uneven, and the light output effect of the LED is difficult to be well controlled. The flip-chip structure When connecting the positive and negative poles of the chip, the connection line is too long, which will easily affect the accuracy of the package. During the soldering process of the flip-chip diode chip, because the electrode faces downward, the alignment of the chip and the soldering point needs to be more precise. Packaging equipment is invested, and the positive and negative electrodes are arranged on the same plane with small intervals, and chip short circuit caused by solder overflow is also prone to occur during soldering. At the same time, when semiconductor diodes are packaged on the substrate, due to the poor thermal conductivity of the substrate, the The backside heat transfer of the semiconductor diode chip is poor, and the high-power LED cannot provide good thermal conductivity in the manufacture of the substrate, thereby reducing the service life of the substrate

Method used

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  • Substrate structure of semiconductor diode chip and production process thereof
  • Substrate structure of semiconductor diode chip and production process thereof
  • Substrate structure of semiconductor diode chip and production process thereof

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Embodiment 2

[0064] Such as Figure 10 As shown, the present invention also provides a semiconductor diode chip packaging manufacturing method, comprising the following steps:

[0065] S100, welding the metal heat sink to the package bracket, and fixing the chip position.

[0066] S200. The packaging bracket with the chip installed is sent to the reflow furnace for reflow soldering. During the reflow soldering, the temperature in the reflow furnace rises rapidly to the preheating temperature, and then continues to heat up to the melting temperature of the solder to produce a melting reaction. Finally, the temperature is rapidly lowered. .

[0067] S300. Connect the positive and negative poles of the chip with the metal pins on the package support, and weld the metal pins on the package support.

[0068] S400, dispensing the hemispherical silica gel on the surface of the chip, and installing the overall connection structure of the reflective cup and the negative lens.

[0069] Wherein st...

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Abstract

The invention discloses a substrate structure of a semiconductor diode chip. The substrate structure of the semiconductor diode chip comprises the semiconductor diode chip, a packaging structure of the semiconductor diode chip, a substrate of a welding packaging structure and a mounting seat for installing the substrate. The substrate includes an aluminum base layer, and grooves are formed in theupper surface and the lower surface of the aluminum base layer. The aluminum substrate is covered with a heat conducting layer, a ceramic film layer is bonded by grooves between the aluminum base layer and the heat conducting layer, the surface of the thermal conducting layer is covered with a dielectric substance layer, and the surface of the dielectric substance layer is covered with a copper foil layer. The bottom of the aluminum base layer is covered with a PI film, a gold thread is arranged between the dielectric substance layer and the copper foil layer, and pasting discs are arranged atthe two ends of the gold thread. An efficient thermal conductivity structure is provided, the coordination of a high-power LED is realized, and the service life of the substrate is prolonged.

Description

technical field [0001] The invention relates to the field of substrates, in particular to a substrate structure of a semiconductor diode chip and a production process thereof. Background technique [0002] In the field of semiconductor diodes, LED is an important photoelectric diode. LED technology is gradually replacing traditional lighting technology and fluorescent technology and entering the lighting field. At the same time, LED chips also have the characteristics of electronic devices. In the process of the pursuit of higher lumens and the continuous compression of industrial manufacturing costs, the flip-chip application of light-emitting diodes has been generally considered to be an industry trend. Flip-chip light-emitting diode chips are beneficial to obtain higher currents. High lumen value, and improve the heat conduction of the chip by soldering the heat sink closer to the semiconductor active area. [0003] The traditional front-mounted structure LED technology ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/48H01L33/60H01L33/62H01L33/64H01L33/00
CPCH01L33/48H01L33/005H01L33/60H01L33/62H01L33/64
Inventor 张娟
Owner 北京敬一科技有限公司
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