Silicon material recovery cleaning method and device

A technology for cleaning devices and silicon materials, applied in cleaning methods and utensils, cleaning methods using liquids, chemical instruments and methods, etc., can solve the problems of large water consumption and discharge, waste of water resources, etc., to reduce water consumption, The effect of saving water resources and reducing costs

Inactive Publication Date: 2018-12-07
ZHEJIANG YUHUI SOLAR ENERGY SOURCE
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] During production, high-purity polycrystalline silicon is first made into crystal ingots, that is, single crystal crystal ingots or polycrystalline crystal ingots are produced by pulling single crystals or ingot polycrystalline silicon. Each crystal ingot uses only the core part in the middle. The surrounding silicon materials are recycled and used as raw materials for production and use again. When recycling the surrounding silicon materials, it is necessary to carry out pre-treatment and

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon material recovery cleaning method and device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] The invention provides a silicon material recovery and cleaning method and device to meet the cleanliness requirements of silicon material recovery, reduce water consumption, save water resources, and reduce costs.

[0030] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0031] An embodiment of the present invention provides a method for recovering and cleaning silicon materials, which includes the step of recovering the pure water used for post-treatment for pre-treatment.

[0032] Compared w...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a silicon material recovery cleaning method. The method comprises the step that pure water used during post-treatment is recycled for pre-treatment. By means of the characteristic that the requirement for the cleanliness of the pretreatment water is low, cleaning water used for post-treatment is recycled for cleaning silicon materials during pretreatment, accordingly, the requirement for the cleanliness of pretreatment can be met, and the purposes that the water consumption amount is reduced, the water resources are saved, and the cost is reduced can be achieved. The invention further discloses a silicon material recovery cleaning device.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a silicon material recycling and cleaning method and device. Background technique [0002] High-purity silicon is the most basic raw material in the semiconductor industry and the photovoltaic industry, and it accounts for a relatively high cost in the industry. Especially in the photovoltaic industry, high-purity silicon accounts for about 20% of the total cost. Therefore, in order to save costs, It is necessary to recycle the high-purity silicon scrap generated in the production process. [0003] During production, high-purity polycrystalline silicon is first made into crystal ingots, that is, single crystal crystal ingots or polycrystalline crystal ingots are produced by pulling single crystals or ingot polycrystalline silicon. Each crystal ingot uses only the core part in the middle. The surrounding silicon materials are recycled and used as raw materials...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): B08B3/12B08B3/04B08B3/02B08B3/08
CPCB08B3/02B08B3/04B08B3/08B08B3/12
Inventor 刘文涛王齐张潇
Owner ZHEJIANG YUHUI SOLAR ENERGY SOURCE
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products