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Texturing and cleaning method of heterojunction battery

A technology of heterojunction cells and texturing, which is used in circuits, electrical components, and final product manufacturing to achieve excellent surface morphology, improve battery performance, and improve efficiency.

Inactive Publication Date: 2020-03-31
JINENG CLEAN ENERGY TECH LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in order to prepare batteries with higher surface cleanliness and higher conversion efficiency, the conventional cleaning process is no longer sufficient.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Embodiment 1 of the present invention discloses a texturing and cleaning method for heterojunction batteries, and the adopted technical scheme is as follows:

[0043] A texturing and cleaning method for a heterojunction battery, comprising the following steps:

[0044] Use SC1 to pre-clean the original silicon wafer. The volume ratio of SC1 is NH4OH: H2O2: H2O is 1:1:5, the temperature is 80°C, and the time is 240s;

[0045] Use KOH solution for coarse throwing, the mass concentration is 10%, the temperature is 80°C, and the time is 120s;

[0046] HCl ozone system solution, the ozone concentration is 20ppm for cleaning, and the time is 120s;

[0047] Immerse the silicon wafer in KOH mass concentration 5%, alcohol-free texturing additive volume concentration 1% for corrosion texturing, temperature 80°C, time 720s;

[0048] Pickling with HF solution, the mass concentration of HF is 5%, and the time is 120s;

[0049] Use SC1 to clean, the volume ratio of SC1 is NH4OH:H2...

Embodiment 2

[0057] Embodiment 2 of the present invention discloses a texturing and cleaning method for heterojunction batteries, and the adopted technical scheme is as follows:

[0058] A texturing and cleaning method for a heterojunction battery, comprising the following steps:

[0059] Use SC1 to pre-clean the original silicon wafer. The volume ratio of SC1 is NH4OH:H2O2:H2O is 1:1:3, the temperature is 85°C, and the time is 120s;

[0060]Use KOH solution for coarse throwing, the mass concentration is 10%, the temperature is 80°C, and the time is 120s;

[0061] HCl ozone system solution, the ozone concentration is 15ppm for cleaning, the time is 480s;

[0062] Immerse the silicon wafer in 5% KOH mass concentration and 1% volume concentration of alcohol-free texturing additive for corrosion texturing at a temperature of 70°C and a time of 900s;

[0063] Pickling with HF solution, the mass concentration of HF is 3%, and the time is 240s;

[0064] Use SC1 to clean, the volume ratio of S...

Embodiment 3

[0072] A texturing and cleaning method for a heterojunction battery, comprising the following steps:

[0073] Use SC1 to pre-clean the original silicon wafer. The volume ratio of SC1 is NH4OH: H2O2: H2O is 1:1:10, the temperature is 65°C, and the time is 600s;

[0074] Use KOH solution for coarse throwing, the mass concentration is 10%, the temperature is 80°C, and the time is 120s;

[0075] HCl ozone system solution, the ozone concentration is 10ppm for cleaning, and the time is 260s;

[0076] Dip the silicon wafer into KOH mass concentration 5%, alcohol-free texturing additive volume concentration 1% for corrosion texturing, temperature 90°C, time 420s;

[0077] Pickling with HF solution, the mass concentration of HF is 10%, and the time is 180s;

[0078] Use ozone system solution for cleaning, the ozone concentration is 15ppm, the cleaning temperature is 65°C, and the cleaning time is 600s;

[0079] Pickling with HF solution, the mass concentration of HF is 10%, and the ...

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PUM

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Abstract

The invention discloses a texturing and cleaning method of a heterojunction battery. The method comprises the following steps: pre-cleaning an original silicon wafer by adopting SC1; carrying out rough polishing and damage removal treatment on the silicon wafer; cleaning with an ozone system solution; texturing the silicon wafer; adopting an SC1 or ozone system solution for cleaning; corroding thesilicon wafer, and carrying out smooth rounding treatment; adopting an SC2 or ozone system solution for cleaning; drying the solution ; and adding an HF acid pickling process before the SC1 or ozonesystem solution cleaning process, the smoothing and rounding process, the SC2 or ozone system solution cleaning process and the drying process. The surface of the silicon wafer is ensured to be completely clean, a better surface appearance is obtained, and the performance of an HJT battery is improved to a great extent.

Description

technical field [0001] The invention relates to the field of heterojunction batteries, and more specifically relates to a method for cleaning texture of heterojunction batteries. Background technique [0002] The development of solar photovoltaic power generation has far-reaching strategic significance. Improving efficiency and reducing costs is one of the focuses of current research. There is no room for improvement in the efficiency of conventional structural cells, and high-efficiency crystalline silicon cells have gradually become the mainstream of market research and development. HJT battery is a low-cost high-efficiency crystalline silicon solar cell that adopts an amorphous silicon / crystalline silicon heterojunction structure. The battery structure has the advantages of fewer process steps, low process temperature, no LID and PID effects, low temperature coefficient, and high efficiency. [0003] HJT cells use high-life n-type silicon as a substrate, and deposit intr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L21/02H01L21/306
CPCH01L31/1804H01L21/02057H01L21/30604Y02P70/50
Inventor 张娟王继磊白焱辉黄金白星亮冯乐贾慧君
Owner JINENG CLEAN ENERGY TECH LTD
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