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A method for suppressing polycrystallization of single crystal diamond edges

A single-crystal diamond and diamond technology, which is applied in the field of single-crystal diamond preparation to achieve the effects of reducing the height of vertical growth, suppressing the speed of lateral epitaxy, and improving the quality of growth

Active Publication Date: 2019-10-22
ZHONGNAN DIAMOND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, there is no relevant report on the method of suppressing polycrystallization of single crystal diamond edges only by strictly controlling various process parameters in the process of preparing single crystal diamond

Method used

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  • A method for suppressing polycrystallization of single crystal diamond edges
  • A method for suppressing polycrystallization of single crystal diamond edges
  • A method for suppressing polycrystallization of single crystal diamond edges

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] The method for suppressing polycrystallization of single crystal diamond edge of the present embodiment, comprises the following steps:

[0037] 1) Preparation and selection of substrate

[0038] The single crystal was diced to obtain several substrates with a (100) orientation and a thickness of 350 μm.

[0039] 2) Pretreatment of the substrate

[0040] The substrate in step 1) is treated with aqua regia, acetone and alcohol ultrasonic cleaning, the number of cleanings for each cleaning medium is 3 times, and the cleaning time is 3 minutes each time, and then select the side with better quality and no impurities and defects as a growth surface.

[0041] 3) Crystal growth

[0042] ① Open the chamber of the MPCVD equipment, and place the substrate processed in step 2) on the surface of the heat sink of the molybdenum abutment, and place it in a square or circular shape based on the center of the abutment; vacuumize to 1 ×10 -3 Below Pa, pass into H 2 , H 2 The flo...

Embodiment 2

[0046] The method for suppressing polycrystallization of single crystal diamond edge of the present embodiment, comprises the following steps:

[0047] 1) Preparation and selection of substrate

[0048] The single crystal was diced to obtain several substrates with a (100) orientation and a thickness of 350 μm.

[0049] 2) Pretreatment of the substrate

[0050] The substrate in step 1) is treated with aqua regia, acetone and alcohol ultrasonic cleaning, the number of cleanings for each cleaning medium is 3 times, and the cleaning time is 3 minutes each time, and then select the side with better quality and no impurities and defects As a growing surface, clean the growing surface and edges with a dust-free swab.

[0051] 3) Crystal growth

[0052] ① Open the chamber of the MPCVD equipment, and place the substrate processed in step 2) on the surface of the heat sink of the molybdenum abutment, and place it in a square or circular shape based on the center of the abutment; vac...

Embodiment 3

[0056] The method for suppressing polycrystallization of single crystal diamond edge of the present embodiment, comprises the following steps:

[0057] 1) Preparation and selection of substrate

[0058] The single crystal was diced to obtain several substrates with a (100) orientation and a thickness of 350 μm.

[0059] 2) Pretreatment of the substrate

[0060] The substrate in step 1) is treated with aqua regia, acetone and alcohol ultrasonically cleaned. The number of cleanings for each cleaning medium is 3 times, and the time for each cleaning is 3 minutes. Then select the side with better quality and no impurities and defects. As a growing surface, clean the growing surface and edges with a dust-free swab.

[0061] 3) Crystal growth

[0062] ① Open the chamber of the MPCVD equipment, and place the substrate processed in step 2) on the surface of the heat sink of the molybdenum abutment, and place it in a square or circular shape based on the center of the abutment; vacu...

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Abstract

The invention belongs to the technical field of preparation of monocrystal diamonds, and particularly relates to a method for inhibiting polycrystallizing of ridges of a monocrystal diamond. The method for inhibiting the polycrystallizing of the ridges of the monocrystal diamond comprises the following steps of (1) preparation and selection of a substrate: slicing the monocrystal to obtain a plurality of substrates, wherein each substrate is oriented as shown in (100), and the thickness is 300 to 350mum; (2) pretreatment of the substrate: sequentially performing acid treatment, acetone and alkaline ultrasonic cleaning on the substrates in step (1), and selecting one surface with higher quality and no impurity defect as the growth surface; (3) growth of crystals. The method has the advantages that by strictly controlling the ratio of flow rate of gas in each step and the power / pressure ratio in the preparation process, the corresponding parameter ratio is designed according to each growth stage; by matching with the strict temperature control, the deposition quality of the monocrystal diamond is finally improved.

Description

technical field [0001] The invention belongs to the technical field of single crystal diamond preparation, and in particular relates to a method for suppressing polycrystallization of single crystal diamond edges. Background technique [0002] Single crystal diamond has a bandgap of 5.5 eV and belongs to ultra-wide bandgap semiconductors. Constant, high Johnson index and Keyse index and other superior properties make it the ultimate material for applications in the field of ultra-high frequency and ultra-high power. Therefore, single crystal diamond has great application requirements in many fields, such as detectors under harsh conditions, micro / nano electromechanical systems, quantum computing, etc., especially has great application advantages in high temperature and high power devices. For this reason, the size and quality of single crystal diamonds are extremely important. [0003] At present, microwave plasma chemical vapor deposition (MPCVD) is the best method to pre...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/04C30B25/02
Inventor 卢灿华王志涛陈明张国凯翟东升
Owner ZHONGNAN DIAMOND CO LTD
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