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A quantum transmission type high-performance thin film sensing material and a preparation method thereof

A transmission-type, high-performance technology, which is applied in the fields of analysis of materials, metal material coating process, and material analysis by electromagnetic means. Facilitate integration and reduce material cost

Inactive Publication Date: 2018-12-14
苏州纽劢特新材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Aiming at the deficiencies of the prior art, the present invention provides a preparation method of a quantum transmission type high-performance thin-film sensing material, which has the advantages of high performance, and solves the problem that the performance of the thin-film sensing material produced at present is not high, so that the sensitivity is not high and the range is supplemented. Factors such as low cost and slow response speed have caused the problem that it is impossible to completely break the foreign technology monopoly in the field of high-end hydrogen sensing

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  • A quantum transmission type high-performance thin film sensing material and a preparation method thereof

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Embodiment 1

[0023] A quantum transmission-type high-performance thin-film sensing material, including the following raw materials in proportions by weight: 20 grams of interdigitated electrodes, 50 grams of monocrystalline silicon wafers, 10 grams of SiO2 insulating layers, 20 grams of metal films, and 50 grams of Pd nanoparticles , 60 grams of PMMA protective layer, 50 grams of Cr nanoparticles, 50 grams of Ni nanoparticles, 50 grams of AI nanoparticles, 100 grams of PET plastics and 50 grams of Pd-Ni alloy nanoparticles.

[0024] Quantum transmission type high-performance thin-film sensing materials are divided into quantum conductance nano-film sensing materials and quantum conductance mechanical thin-film sensing materials. formed by the array.

[0025] Another technical problem to be solved by the present invention is to provide a method for preparing a quantum transmission type high-performance thin-film sensing material, which includes the following steps:

[0026] 1) Processing of ...

Embodiment 2

[0030] A quantum transmission type high-performance thin-film sensing material, including the following raw materials in proportion by weight: 30 grams of interdigitated electrodes, 70 grams of monocrystalline silicon wafers, 15 grams of SiO2 insulating layers, 30 grams of metal films, and 75 grams of Pd nanoparticles , 70 grams of PMMA protective layer, 75 grams of Cr nanoparticles, 75 grams of Ni nanoparticles, 75 grams of AI nanoparticles, 110 grams of PET plastics and 75 grams of Pd-Ni alloy nanoparticles.

[0031] Except for the above differences, other aspects of the second embodiment are the same as those of the first embodiment, and the second embodiment also has the same advantages as those of the first embodiment, which will not be repeated here.

Embodiment 3

[0033] A quantum transmission type high-performance thin-film sensing material, including the following raw materials in proportion by weight: 50 grams of interdigitated electrodes, 90 grams of monocrystalline silicon wafers, 30 grams of SiO2 insulating layers, 40 grams of metal films, and 100 grams of Pd nanoparticles , 80 grams of PMMA protective layer, 100 grams of Cr nanoparticles, 100 grams of Ni nanoparticles, 100 grams of AI nanoparticles, 120 grams of PET plastics and 100 grams of Pd-Ni alloy nanoparticles.

[0034] Except for the above differences, the third embodiment is the same as the first embodiment above, and the third embodiment also has the same advantages as the first embodiment above, which will not be repeated here.

[0035] The beneficial effects of the present invention are: the cluster beam deposition technology is the current mainstream technology for gas-phase preparation of nanoparticle-assembled thin films, and has the advantages of high compatibility...

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Abstract

The invention relates to the technical field of new materials, and discloses a quantum transmission type high-performance film sensing material, comprising the following raw materials in parts by weight: interdigital electrode 20-50g, single crystal silicon wafer 50- 90g, SiO2 insulating layer 10-30g, metal film 20-40g, Pd nanoparticle 50-100 g, PMMA protective lay 60-80 g, Cr nanoparticle 50-100g, Ni nanoparticle 50-100 g, AI nanoparticles 50-100 g, PET 100-120 g and Pd-Ni alloy nanoparticles 50-100 g. According to the preparation method of the quantum transmission type high-performance thinfilm sensing material, the sensing material of quantum conductivity nano-film has very high sensitivity, for example, the sensitivity of quantum conductivity nano-strain film sensing material can betens to hundreds of times higher than that of conventional metal strain gauge, The equivalent resistance of nano-particle lattice is much higher than that of metal foil, so it can realize low power consumption (nanowires to micro-wires) and miniaturization. The material is easy to integrate with electrical measurement unit on one chip, and is highly compatible with MEMS.

Description

technical field [0001] The invention relates to the technical field of new materials, in particular to a method for preparing a quantum transmission type high-performance thin-film sensing material. Background technique [0002] Thin-film sensing materials based on nano-effects are receiving increasing attention from the research community and the industry. Nanomaterials have unique properties and can be used as sensitive materials with excellent performance, thus developing a new generation of thin films with better performance than existing thin-film sensing materials. Sensing materials. At present, the United States, the European Union and Japan have successively listed sensing technology as a key technology for priority development in the 21st century. According to the survey report of NanoMarkets-LC in the United States, quantum transmission-type high-performance thin-film sensing materials will receive continuous growth in the next two decades. In 2012, the market scale ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81B7/00B81B7/02B81C1/00G01N27/00
CPCB81B7/0032B81B7/02B81C1/00261B81C1/00349B81C1/00388G01N27/00
Inventor 周剑峰赵明国宋翔宇韩民
Owner 苏州纽劢特新材料科技有限公司
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