High-sensitivity pendulous micromachined silicon accelerometer and preparation method thereof
A high-sensitivity, accelerometer technology, applied in the direction of velocity/acceleration/shock measurement, measurement of acceleration, measurement device, etc., can solve the problem of small effective detection area of sensitive mass blocks, limitations of temperature characteristics and robustness, and low device space utilization and other problems, to achieve the effect of increasing the effective detection area, improving space utilization, and high processing quality
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[0062] like Figure 6 As shown, the implementation steps of the preparation method of the high-sensitivity torsion-type silicon micro-accelerometer of the present embodiment include:
[0063] 1) Prepare the first SOI silicon wafer for preparing the silicon substrate 1, such as Figure 6 As shown in (a), the device layer thickness of the first SOI silicon wafer in this embodiment is 6 microns;
[0064] 2) On the surface of the first SOI silicon wafer, the capacitance gap between the silicon sensitive structure 2 and the silicon substrate 1 is formed by dry etching to a first depth (2 microns), such as Figure 6 as shown in (b);
[0065] 3) On the surface of the first SOI silicon wafer, the capacitor plate assembly 11 and the lead electrode assembly 12 are formed by dry etching to a second depth (4 microns), such as Figure 6 as shown in (c);
[0066] 4) Epitaxially grow a layer of silicon dioxide with a thickness of 0.5 microns on the surface of the first SOI silicon wafer,...
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