High-sensitivity pendulous micromachined silicon accelerometer and preparation method thereof

A high-sensitivity, accelerometer technology, applied in the direction of velocity/acceleration/shock measurement, measurement of acceleration, measurement device, etc., can solve the problem of small effective detection area of ​​sensitive mass blocks, limitations of temperature characteristics and robustness, and low device space utilization and other problems, to achieve the effect of increasing the effective detection area, improving space utilization, and high processing quality

Active Publication Date: 2018-12-14
NAT UNIV OF DEFENSE TECH +1
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  • Claims
  • Application Information

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Problems solved by technology

However, low sensitivity, high noise, temperature characteristics and robustness are limited by its own structure
[0004] Chinese patent documents with patent application numbers 201410825011.3 and 201410606833.2 disclose two types of torsion micro-mechanical accelerometers, but the sensitive masses for micro-acceleration in the above two prior art are connected to the support beam through the cantilever beam, and the anchor points are placed outside The fixing method of the silicon sensitive structure has the problems of low device space utilization, small effective detection area of ​​the sensitive mass block, and low sensitivity; and both solutions are prepared by wet etching process, which has the problems of large device area, low yield and processing cost advanced questions

Method used

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  • High-sensitivity pendulous micromachined silicon accelerometer and preparation method thereof
  • High-sensitivity pendulous micromachined silicon accelerometer and preparation method thereof
  • High-sensitivity pendulous micromachined silicon accelerometer and preparation method thereof

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preparation example Construction

[0062] like Figure 6 As shown, the implementation steps of the preparation method of the high-sensitivity torsion-type silicon micro-accelerometer of the present embodiment include:

[0063] 1) Prepare the first SOI silicon wafer for preparing the silicon substrate 1, such as Figure 6 As shown in (a), the device layer thickness of the first SOI silicon wafer in this embodiment is 6 microns;

[0064] 2) On the surface of the first SOI silicon wafer, the capacitance gap between the silicon sensitive structure 2 and the silicon substrate 1 is formed by dry etching to a first depth (2 microns), such as Figure 6 as shown in (b);

[0065] 3) On the surface of the first SOI silicon wafer, the capacitor plate assembly 11 and the lead electrode assembly 12 are formed by dry etching to a second depth (4 microns), such as Figure 6 as shown in (c);

[0066] 4) Epitaxially grow a layer of silicon dioxide with a thickness of 0.5 microns on the surface of the first SOI silicon wafer,...

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Abstract

The invention discloses a high-sensitivity pendulous micromachined silicon accelerometer and a preparation method thereof. The micromachined silicon accelerometer comprises a silicon substrate and a silicon sensitive structure which are connected into a whole; the silicon sensitive structure comprises a stress release structure, two pairs of support beams, a pair of coupling sensitive mass blocksand a pair of anchor points, the coupling sensitive mass blocks are symmetrically arranged, each coupling sensitive mass block is connected with the corresponding anchor point through one independentsupport beam and is in coupling connection with the stress release structure through the other independent support beam, and the mass center of each coupling sensitive mass block is located in the middle point of the support beam connected with the anchor point; and in the preparation method, dry etching preparation is adopted. The micromachined silicon accelerometer has the advantages that the device space utilization rate is high, the effective detection area of the sensitive mass blocks is large, the flexibility and the finished product rate are high, the cost is low, the processing qualityis high, the processing robustness is good, and the application range is wide.

Description

technical field [0001] The invention relates to silicon microsensor technology, in particular to a high-sensitivity torsion-type silicon micro-accelerometer and a preparation method thereof. Background technique [0002] Accelerometers are mainly used to measure the motion parameters of moving objects relative to inertial space, and are indispensable sensor devices for modern life. Compared with traditional accelerometers, MEMS micro-accelerometers have the characteristics of small size, low power consumption, and easy batch processing, so they quickly become a research hotspot at home and abroad, and their performance is constantly improving, and they are widely used in military and civilian fields. [0003] At present, foreign uniaxial micro-accelerometer products have matured and been widely used. Domestic research and development of uniaxial micro-accelerometers are also increasing, and some laboratories have developed high-performance engineering. However, how to manuf...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01P15/125
CPCG01P15/125
Inventor 肖定邦吴学忠侯占强陈志华苗桐侨卓明周剑张勇猛朱新建李涛李青松胡倩
Owner NAT UNIV OF DEFENSE TECH
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