Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Thermal bonding sheet, thermal bonding sheet with dicing tape, bonded body production method, and power semiconductor device

A manufacturing method and cutting tape technology, applied in welding/cutting medium/material, semiconductor device, semiconductor/solid-state device manufacturing, etc., can solve problems such as thermal characteristics and reliability, and achieve the effect of cheap manufacturing

Pending Publication Date: 2018-12-21
NITTO DENKO CORP
View PDF14 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For semiconductor devices used in harsh thermal environments, assuming high temperature operation of around 250°C, solder and conductive adhesives, which are conventional joining / adhesive materials, have problems in terms of thermal characteristics and reliability

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thermal bonding sheet, thermal bonding sheet with dicing tape, bonded body production method, and power semiconductor device
  • Thermal bonding sheet, thermal bonding sheet with dicing tape, bonded body production method, and power semiconductor device
  • Thermal bonding sheet, thermal bonding sheet with dicing tape, bonded body production method, and power semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0169] Hereinafter, the present invention will be described in detail using examples, but the present invention is not limited to the following examples unless the gist is exceeded.

[0170] Components used in Examples will be described.

[0171] Copper particles A (average particle diameter 150nm, crystallite diameter size 30nm)

[0172] Copper particles B (average particle diameter 300nm, crystallite diameter size 30nm)

[0173] Pyrolytic binder A (polypropylene carbonate resin): QPAC40 manufactured by Empower, solid at 23°C

[0174] Low boiling point binder B (terpene alcohol-based binder (manufactured by Nippon Terpene Chemicals, Inc., TersolveMTPH))

[0175] Organic binder C (acrylic resin): MM-2002-1 manufactured by Fujikura Kasei Co., Ltd., solid at 23°C

[0176] Organic solvent A: methyl ethyl ketone (MEK)

[0177] [Production of heat bonding sheet]

[0178] According to the compounding ratio described in Table 1, each component and solvent described in Table 1 we...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
diameteraaaaaaaaaa
viscosityaaaaaaaaaa
Login to View More

Abstract

A thermal bonding sheet having a pre-sintering layer containing copper particles and polycarbonate.

Description

technical field [0001] The present invention relates to a sheet for thermal bonding, a sheet for thermal bonding with a dicing tape, a method for producing a bonded body, and a power semiconductor device. Background technique [0002] In the manufacture of semiconductor devices, the method of bonding semiconductor elements to adherends such as metal lead frames (so-called die bonding method) has evolved from the conventional gold-silicon eutectic to methods using solder and resin paste . Currently, conductive resin pastes are sometimes used. [0003] In recent years, the spread of power semiconductor devices that control and supply electric power has become remarkable. Since current is always flowing in the power semiconductor device, it generates a large amount of heat. Therefore, it is desirable for a conductive adhesive used in a power semiconductor device to have high heat dissipation and low resistivity. [0004] Low loss and high-speed operation are required for po...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B22F7/08B22F1/00B23K20/00H01L21/52
CPCH01L2924/181B22F7/08B23K20/00H01L21/52H01L2224/48091H01L2224/73265H01L2224/83191B23K35/302B22F7/008B23K35/3613B23K35/383B23K35/0233B23K2101/40B22F2999/00B22F1/07H01L2224/8384H01L2224/29347H01L2924/00014H01L2924/00012B22F2003/248B22F2201/01B22F2201/20B22F2201/02H01L2021/60015H01L21/6836H01L24/27H01L24/32H01L24/83H01L2924/01029H01L2924/2011
Inventor 菅生悠树镰仓菜穗本田哲士
Owner NITTO DENKO CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products