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Control method and bias power supply of plasma immersion ion implanter

An ion implanter, plasma technology, applied in ion implantation plating, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as insufficient removal of negatively charged particles

Active Publication Date: 2020-09-25
ION BEAM SERVICES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0072] This time is largely insufficient to remove negatively charged particles

Method used

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  • Control method and bias power supply of plasma immersion ion implanter
  • Control method and bias power supply of plasma immersion ion implanter
  • Control method and bias power supply of plasma immersion ion implanter

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Experimental program
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Embodiment Construction

[0101] refer to figure 2 , the ion implanter includes several elements arranged inside and outside the vacuum enclosure ENV. For microelectronics applications, aluminum housings are recommended if one wishes to limit contamination by metallic elements such as iron, chromium, nickel or cobalt. Silicon or silicon carbide coatings may also be used.

[0102] The substrate carrier plate PPS, in the form of a horizontal disk movable about its vertical axis AXT, receives the substrate SUB to which ions are to be implanted.

[0103] In the vicinity of the substrate SUB there is a recovery electrode, for example a ring concentric with the substrate SUB. The electrode may also be in the form of a LIN ("liner" in English) protective sheet, which is vertically arranged around the substrate SUB to protect the enclosure ENV.

[0104] The upper part of the enclosure ENV receives a cylindrical plasma source volume CS with a vertical axis AXP. This source body is quartz. It is surrounded...

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Abstract

The invention relates to a control method for an implanter operating under plasma immersion, comprising: - an implantation phase [1] during which the plasma AP is excited and the substrate is negatively biased S, - a neutralization phase [2] , during which the plasma AP is excited and the substrate is applied with a positive or zero bias S, - the suppression phase [3], during which the plasma AP is extinguished, - the expulsion phase of negatively charged particles at the substrate [4] , during which the plasma AP is extinguished. The method is characterized in that the duration of this discharge phase is greater than 5 μs. Said invention also relates to the bias power supply of the injector.

Description

technical field [0001] The invention relates to a control method of an ion implanter operating in a plasma immersion mode. Background technique [0002] The field of the invention is that of ion implanters operating in plasma immersion mode. Therefore, ion implantation of a substrate consists in immersing it in a plasma and biasing it with a negative voltage of tens of volts to tens of kilovolts (typically less than 100 kV) in order to be able to establish an acceleration of the plasma ions towards the substrate so that they are implanted the electric field. The atoms thus implanted are called dopants. [0003] The penetration depth of ions is determined by their acceleration energy. It depends on the one hand on the voltage applied to the substrate and on the other hand on the respective properties of the ions and the substrate. The concentration of implanted atoms depends on the use per cm 2 The dose and implantation depth indicated by the number of ions. [0004] Fo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32C23C14/48H01L21/223
CPCC23C14/48H01J37/32174H01J37/32357H01J37/32412H01J37/32422H01J37/32706H01J37/32871H01L21/2236H01J37/026H01J37/3171H01J2237/0044
Inventor F·托瑞格罗萨L·洛克斯
Owner ION BEAM SERVICES
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