A method of forming a semiconductor device

Abstract

The invention discloses a formation method for semiconductor devices. The formation method includes providing a substrate, and successively forming a first mask material layer, a sacrificial layer anddiscrete photoresist layers on the substrate; taking the discrete photoresist layers as masks to etch the sacrificial layer so that discrete sacrificial layers can be formed; forming first side wallscovering the side wall surfaces of the discrete sacrificial layers; forming second side walls covering the side wall surfaces of the first side walls after removing the discrete sacrificial layers; removing the first side walls through etching, taking the second side walls as the masks to etch the first mask material layer to form first mask layers; forming a second mask material layer covering the surfaces of the first mask layers; and removing part of the second mask material layer until the first mask layers are exposed, and removing the first mask layers through etching to form second mask layers. According to the method, the mechanical properties of the semiconductor device mask layers can be improved, and the accuracy of patterns can be enhanced during transferring.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a semiconductor device. Background technique [0002] In the semiconductor manufacturing process, the pattern on the mask plate is usually transferred to the substrate by photolithography process. With the continuous reduction of the size of semiconductor devices, the critical dimensions of lithography are gradually approaching or even exceeding the physical limit of lithography, which poses more severe challenges to lithography technology. Anti-Spacer Quadruple Patterning (ASQP) technology is an important patterning process, which is widely used in semiconductor back-end manufacturing process (Back-end OfLine, BEOL). ASQP can realize the automatic alignment of the photocopying process, reduce the size of components, trenches, gates and other structures in the circuit, and can also reduce the size of the target pattern, thereby reducing the size of...

AI Technical Summary

Problems solved by technology

[0005] Embodiments of the present invention provide a method for forming a semiconductor device. Materials with relatively high mechanical properties such as hardness and strength are selected to form a mask layer to improve the ability of the mask layer to resist etching and ensure the size and pattern structure of the mask layer. Accurate, so as to solve the problem that the subsequent pattern cannot be accurately formed

Images