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Preparation method of a nanorod array heterojunction structure ultraviolet photodetector

A nanorod array and heterojunction technology, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems affecting photoelectron absorption and transmission, slow response rate of ultraviolet photodetectors, long photoresponse time, etc. problem, to achieve the effect of good UV selectivity, excellent UV responsivity and photoresponse rate

Active Publication Date: 2020-04-24
DALIAN UNIV OF TECH
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0005] It was found that pure SnO 2 , The response rate of the ZnO nanorod structure ultraviolet photodetector is slow, this is because although the SnO 2 Nanorods have high ultraviolet light responsivity, but their growth rate is slow. After 24 hours of reaction, they are only about 200nm, which affects their absorption and transmission of photoelectrons, resulting in a longer photoresponse time; and the preparation of ZnO nanorods by hydrothermal method has The advantage of fast growth rate, the length is greater than 1 μm after 4 hours of reaction, but the photoresponsivity is low

Method used

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  • Preparation method of a nanorod array heterojunction structure ultraviolet photodetector
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  • Preparation method of a nanorod array heterojunction structure ultraviolet photodetector

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Embodiment 1

[0026] Configured with 13mM SnCl 4 ·5H 2 O solution (deionized water: absolute ethanol = 1:1) 60mL, add 3mL HCl (wt% = 37 ~ 38%), after magnetic stirring for 15min, add FTO conductive glass coated with a seed layer, and react at 180°C for 12h . After the reaction was completed, it was cooled to room temperature, rinsed alternately with deionized water and absolute ethanol three times, dried at 60°C, and calcined at 400°C for 30 minutes at high temperature. Update the growth solution 3 times to get the desired SnO 2 Nanorod array structure.

[0027] The tin oxide nanorods have a diameter of 44.64nm and a length of 357.14nm.

Embodiment 2

[0029] Configured with 13mM SnCl 4 ·5H 2 O solution (deionized water: absolute ethanol = 1:1) 60mL, add 3mL HCl (wt% = 37 ~ 38%), after magnetic stirring for 15min, add FTO conductive glass coated with a seed layer, and react at 180°C for 12h . After the reaction was completed, it was cooled to room temperature, rinsed alternately with deionized water and absolute ethanol three times, dried at 60°C, and calcined at 400°C for 30 minutes at high temperature. A 5.0mM ethanol solution of zinc acetate was spin-coated on the FTO conductive glass at a spin-coating rate of 2000r / min for a spin-coating time of 30s. After six times of spin-coating, it was calcined at 350°C for 60min at high temperature. The treated sample was placed in a place containing 0.37g Zn(NO 3 ) 2 ·6H 2 O and 0.17g urotropine (C 6 h 12 N 4 ) in 50mL aqueous solution; after magnetic stirring for 15min, add FTO conductive glass coated with ZnO seed layer, and react at 95°C for 4h; after the reaction, cool ...

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Abstract

The invention discloses a preparation method of an ultraviolet light detector with a tin oxide-zinc oxide nanorod array heterojunction structure, and belongs to the technical field of semiconductor photoelectric detection. The preparation method includes the steps of performing hydro-thermal synthesis on well ordered SnO2 nanorod arrays, and growing well ordered ZnO nanorod arrays on the surface of the SnO2 nanorod arrays to form a heterojunction structure to promote photogenerated electron transmission. The preparation method of an ultraviolet light detector with a tin oxide-zinc oxide nanorod array heterojunction structure has the advantages of being simple, being easy to control the reaction condition, and being low in the operation cost. The conductive surfaces of the prepared electrode material are face-to-face bonded, so as to form an ultraviolet light detector with a simple sandwich structure. The prepared ultraviolet light detector has excellent ultraviolet light selectivity, excellent ultraviolet light responsibility and light response rate, and solves the problem that an ultraviolet light detector is hard to consider both high responsibility and high response rate, and isa high performance ultraviolet light detector.

Description

technical field [0001] The invention belongs to the technical field of semiconductor photodetection, and in particular relates to a method for preparing a metal oxide semiconductor nanocomposite electrode. Background technique [0002] In recent years, with the continuous improvement of the level of science and technology, the measurement range of photoelectric detection technology has been continuously enlarged. The wavelength range that can be detected by this detection technology has expanded to the ultraviolet light region between 10nm and 400nm, which is difficult for people to detect. The expansion of the detection range has correspondingly led to the rapid development of the development and manufacture of ultraviolet intensity detection instruments, and the continuous improvement of measurement technology, and the ultraviolet detector is one of the key research topics in photoelectric detection at home and abroad. [0003] Commercial UV detectors are mainly based on ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCH01L31/18Y02P70/50
Inventor 郑文姬董雅楠贺高红焉晓明代岩
Owner DALIAN UNIV OF TECH