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Preparation method of a high-performance semiconductor oxide composite structure ultraviolet light detector

A composite structure, semiconductor technology, used in semiconductor devices, climate sustainability, final product manufacturing, etc., can solve problems such as low response rate, and achieve high detection sensitivity, good UV light selectivity, and excellent UV light responsivity. Effect

Active Publication Date: 2020-06-16
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The study found that tin oxide nanomaterials have extremely high ultraviolet light responsivity, but the response rate is low, and further improvement is needed

Method used

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  • Preparation method of a high-performance semiconductor oxide composite structure ultraviolet light detector
  • Preparation method of a high-performance semiconductor oxide composite structure ultraviolet light detector
  • Preparation method of a high-performance semiconductor oxide composite structure ultraviolet light detector

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Effect test

Embodiment 1

[0020] Configured with 13mM SnCl 4 ·5H 2 O solution (deionized water: absolute ethanol = 1:1) 60mL, add 3mL HCl (wt% = 37 ~ 38%), after magnetic stirring for 10min, add FTO conductive glass coated with a seed layer, and react at 180°C for 12h . After the reaction, cool to room temperature, rinse with deionized water and absolute ethanol three times, dry at 60°C, and calcine at 400°C for 30 minutes to obtain the desired SnO 2 Nanorod array structure.

[0021] The tin oxide nanorods have a diameter of 30nm and a length of 200nm.

Embodiment 2

[0023] Configured with 13mM SnCl 4 ·5H 2 O solution (deionized water: absolute ethanol = 1:1) 60mL, add 4mL HCl (wt% = 37 ~ 38%), after magnetic stirring for 10min, add FTO conductive glass coated with a seed layer, and react at 180°C for 12h . After the reaction was completed, it was cooled to room temperature, rinsed alternately with deionized water and absolute ethanol three times, dried at 60°C, and calcined at 400°C for 30 minutes at high temperature. The resulting product was placed in 30mL, 0.2M TiCl 4 In aqueous solution, after reacting at room temperature for 36 h, alternately rinse with deionized water and absolute ethanol for 3 times, and then dry at room temperature.

[0024] The obtained titanium oxide nanoparticles have a diameter of about 450nm and a large number of branched structures, which are beneficial to the generation of photoelectrons.

[0025] The photoresponsivity of tin oxide nanorod array-titanium oxide nanoparticle composite structure ultraviole...

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Abstract

The invention discloses a high performance semiconductor oxide composite structure ultraviolet light detector preparation method, and belongs to the semiconductor photoelectric detection technical field; the method comprises the following steps: hydrothermally synthesizing a SnO2 nanometer rod array arranged in order; carrying TiO2 nano particles with massive branch structures on the array surface, thus forming a multistage branch structure. The preparation method is simple and low in operation cost; conductive surfaces of a formed electrode plate material are attached face to face, thus forming a simple structure ultraviolet light detector in a sandwich structure; the detector has excellent ultraviolet light selectivity, higher detection sensitivity, and excellent ultraviolet light responsibility and light response rate; the high performance ultraviolet light detector can solve the problems that the high responsibility and high response rate of the ultraviolet light detector cannot becompatible.

Description

technical field [0001] The invention belongs to the technical field of semiconductor photodetection, and in particular relates to a method for preparing a metal oxide semiconductor nanocomposite electrode. Background technique [0002] A photodetector is a device that can convert light radiation energy into a physical quantity that is easy to measure. Its principle is the photoelectric effect-under the irradiation of electromagnetic waves higher than a specific frequency, electrons inside certain substances will be excited by photons to generate Current, that is, photoelectricity. Among them, ultraviolet light detectors are widely used in military, medical, scientific research and other fields, such as environmental monitoring, ultraviolet communication, ultraviolet early warning and biochemical analysis. However, commercial UV detectors still have disadvantages such as poor UV selectivity, long response time, and low responsivity, which not only hinders UV monitoring, but ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/032H01L31/0392H01L31/109B82Y40/00
CPCB82Y40/00H01L31/032H01L31/0392H01L31/109H01L31/18Y02P70/50
Inventor 郑文姬董雅楠丁锐贺高红焉晓明代岩
Owner DALIAN UNIV OF TECH