A cleaning method of solar polycrystalline black silicon wafer
A technology of solar energy and silicon wafers, which is applied in photovoltaic power generation, electrical components, climate sustainability, etc., can solve the problems that the conversion efficiency of black silicon wafers is not significantly improved, and the damage to the suede surface of black silicon wafers cannot be removed. Cleanliness, mild treatment temperature, and the effect of improving short-circuit current
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Embodiment 1
[0026] A cleaning method for solar polycrystalline black silicon wafers, comprising the following steps:
[0027] (1) One-time water washing: at room temperature, wash the surface of the black silicon wafer with deionized water for 30 seconds. This step can clean the surface of the black silicon wafer, such as dust and other impurities.
[0028] (2) Alkaline cleaning: the black silicon chip after cleaning with deionized water is treated with a concentration of 1 wt% potassium hydroxide solution for 40s, and the temperature of the potassium hydroxide solution is 20°C. Add 30mL potassium hydroxide solution to a black silicon wafer. This step process can re-modify the structure of the surface of the black silicon wafer. In this process, the change of reflectivity should not exceed 2%, otherwise the short-circuit current will be reduced.
[0029] (3) One-time rinsing: at room temperature, the black silicon wafer treated with the potassium hydroxide solution was cleaned with deion...
Embodiment 2
[0033] A cleaning method for solar polycrystalline black silicon wafers, comprising the following steps:
[0034] (1) One-time water washing: at room temperature, wash the surface of the black silicon wafer with deionized water for 50 seconds. This step can clean the surface of the black silicon wafer, such as dust and other impurities.
[0035] (2) Alkaline cleaning: the black silicon chip after cleaning with deionized water is treated with a potassium hydroxide solution of 2 wt % for 50 seconds, and the temperature of the potassium hydroxide solution is 25° C. Add 40mL potassium hydroxide solution to the black silicon wafer. This step process can re-modify the structure of the surface of the black silicon wafer. In this process, the change of reflectivity should not exceed 2%, otherwise the short-circuit current will be reduced.
[0036] (3) One-time rinsing: at room temperature, the black silicon wafer treated with the potassium hydroxide solution was cleaned with deionize...
Embodiment 3
[0040] A cleaning method for solar polycrystalline black silicon wafers, comprising the following steps:
[0041] (1) One-time water washing: at room temperature, wash the surface of the black silicon wafer with deionized water for 50 seconds. This step can clean the surface of the black silicon wafer, such as dust and other impurities.
[0042] (2) Alkaline cleaning: the black silicon chip after cleaning with deionized water is treated with a concentration of 4wt% potassium hydroxide solution for 50s, and the temperature of the potassium hydroxide solution is 30°C. Add 50mL potassium hydroxide solution to the black silicon wafer. This step process can re-modify the structure of the surface of the black silicon wafer. In this process, the change of reflectivity should not exceed 2%, otherwise the short-circuit current will be reduced.
[0043] (3) One-time rinsing: at room temperature, the black silicon wafer treated with the potassium hydroxide solution was cleaned with deio...
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Abstract
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