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A method for prepare a silver-doped copper-zinc-tin-sulfur film

A copper-zinc-tin-sulfur and silver-doped technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of silver-doped copper-zinc-tin-sulfur film compactness and low silver doping efficiency, and achieves The effect of improving carrier mobility, uniform distribution, and improving Ag doping efficiency

Active Publication Date: 2019-01-04
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of this, the present invention provides a method for preparing a silver-doped copper-zinc-tin-sulfur thin film, which solves the problems of low density and low silver doping efficiency of the silver-doped copper-zinc-tin-sulfur thin film obtained by the existing preparation method question

Method used

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  • A method for prepare a silver-doped copper-zinc-tin-sulfur film
  • A method for prepare a silver-doped copper-zinc-tin-sulfur film
  • A method for prepare a silver-doped copper-zinc-tin-sulfur film

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Embodiment 1

[0053] Step 1: Soda-lime glass coated with molybdenum (Mo) was selected as the substrate, and the substrate was ultrasonically cleaned for 15 minutes with acetone, absolute ethanol, and deionized water in sequence, and dried with nitrogen gas for later use. Put the cleaned substrate into the magnetron sputtering vacuum chamber, and evacuate the vacuum chamber to the background vacuum degree of 5×10 -4 Pa, and then introduce argon gas as the working gas, wherein the flow rate of argon gas is 20mL / min, and the working pressure is 0.5Pa; Pre-sputtering to remove impurities on the surface of the target, wherein the atomic ratio of silver to copper-silver alloy in the copper-silver alloy target is 0.1; then the formal sputtering coating is performed, and the number of sputtering cycles is 4. In each sputtering cycle, The sputtering sequence is Zn, Sn, Cu-Ag, among which the sputtering powers of zinc single substance target, tin simple substance target and copper silver alloy target...

Embodiment 2

[0058] The difference between embodiment 2 and embodiment 1 is that the atomic ratio of silver to copper-silver alloy in the copper-silver alloy target in embodiment 1 is 0.1, while the atomic ratio of silver to copper-silver alloy in the copper-silver alloy target in embodiment 2 is 0.5.

Embodiment 3

[0060] The difference between Example 3 and Example 1 is that the vulcanization temperature in Example 1 is 500° C., and the vulcanization temperature in Example 3 is 540° C.

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Abstract

The invention relates to the technical field of photoelectric materials, in particular to a preparation method of a silver doped copper-zinc-tin-sulfur film. The invention discloses a preparation method of silver-doped copper-zinc-tin-sulfur thin film, comprising the following steps: 1. Vacuum sputtering zinc, tin and copper-silver alloy are circulated on a substrate in turn to obtain a precursor;2, sulfide that precursor to obtain a silver-doped cop-zinc-tin-sulfur film. The invention solves the technical problems of low densification and silver doping efficiency of the silver doped copper-zinc-tin-sulfur thin film obtained by the prior preparation method and poor process repeatability.

Description

technical field [0001] The invention relates to the technical field of photoelectric materials, in particular to a method for preparing a silver-doped copper-zinc-tin-sulfur thin film. Background technique [0002] Quaternary semiconductor compound CuZnSnS (Cu 2 ZnSnS 4 ) thin film has the advantages of rich reserves of constituent elements, non-toxicity, low cost, and high light absorption coefficient, and has become a new generation of inorganic thin film solar cell absorber material with development potential. [0003] In Cu 2 ZnSnS 4 In thin films, due to the similar ionic radii of Cu and Zn, Cu is prone to appear at high carrier concentrations. Zn The anti-site defect makes the defect formation energy of the prepared thin film very low. Cu Zn Antisite defects can cause surface defects or bulk defects, which are key factors affecting the open circuit voltage and conversion efficiency of solar cells. Inhibit Cu Zn A feasible way of antisite defect is to Cu 2 ZnSn...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
CPCH01L21/02422H01L21/02568H01L21/02584H01L21/02614
Inventor 许佳雄黄晓梦林俊辉邱磊庄楚楠
Owner GUANGDONG UNIV OF TECH